My Quote Request
5961-00-008-1928
20 Products
Z1403
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081928
NSN
5961-00-008-1928
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1403
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12255
OVERALL WIDTH ACROSS FLATS: 0.425 INCHES MINIMUM AND 0.435 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY NAVORD OD41152
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
2S104/TIB7704
TRANSISTOR
NSN, MFG P/N
5961000081458
NSN
5961-00-008-1458
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
40-666-003-01
TRANSISTOR
NSN, MFG P/N
5961000081458
NSN
5961-00-008-1458
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
0AP12
DIODE,SPECIAL
NSN, MFG P/N
5961000081477
NSN
5961-00-008-1477
MFG
VISHAY
Description
DIODE,SPECIAL
Related Searches:
0C203
TRANSISTOR
NSN, MFG P/N
5961000081478
NSN
5961-00-008-1478
MFG
BRITISH AEROSPACE MILITARY AIRCRAFT & AEROSTRUCTURES
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
10CB7117
TRANSISTOR
NSN, MFG P/N
5961000081478
NSN
5961-00-008-1478
MFG
VISHAY
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
9101-2701-001
DIODE,SPECIAL
NSN, MFG P/N
5961000081510
NSN
5961-00-008-1510
MFG
BAE SYSTEMS OPERATIONS LTD
Description
DIODE,SPECIAL
Related Searches:
ZFB27
DIODE,SPECIAL
NSN, MFG P/N
5961000081510
NSN
5961-00-008-1510
MFG
ELECTRICARS LTD
Description
DIODE,SPECIAL
Related Searches:
1S7120A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081511
NSN
5961-00-008-1511
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
5961-99-0372395
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081511
NSN
5961-00-008-1511
5961-99-0372395
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081511
NSN
5961-00-008-1511
MFG
NATO STOCK NUMBER ASSIGNED BY ANOTHER NATION
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
9101-1201-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081511
NSN
5961-00-008-1511
9101-1201-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081511
NSN
5961-00-008-1511
MFG
BAE SYSTEMS OPERATIONS LTD
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
CV7145
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081511
NSN
5961-00-008-1511
MFG
QINETIQ LTD
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
HS7120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081511
NSN
5961-00-008-1511
MFG
RAYTHEON SYSTEMS LTD ELECTRONIC SYST EMS GLENROTHES
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
71-1048
RECTIFIER,SPECIAL
NSN, MFG P/N
5961000081591
NSN
5961-00-008-1591
MFG
DARCHEM ENGINEERING LTD
Description
RECTIFIER,SPECIAL
Related Searches:
71-1480
RECTIFIER,SPECIAL
NSN, MFG P/N
5961000081591
NSN
5961-00-008-1591
MFG
DLA LAND AND MARITIME
Description
RECTIFIER,SPECIAL
Related Searches:
15130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081598
NSN
5961-00-008-1598
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
Z3B62CF
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081612
NSN
5961-00-008-1612
MFG
NORTEL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D309978-7
DIODE,SPECIAL
NSN, MFG P/N
5961000081628
NSN
5961-00-008-1628
MFG
RS COMPONENTS LIMITED
Description
DIODE,SPECIAL
Related Searches:
1S6013A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081637
NSN
5961-00-008-1637
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
5961-99-0375090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081637
NSN
5961-00-008-1637
5961-99-0375090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000081637
NSN
5961-00-008-1637
MFG
NATO STOCK NUMBER ASSIGNED BY ANOTHER NATION
Description
SEMICONDUCTOR MATERIAL: SILICON