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5961-00-011-3581
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RELEASE2893
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000113581
NSN
5961-00-011-3581
RELEASE2893
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000113581
NSN
5961-00-011-3581
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1838
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-364
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.432 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 13.5 GHZ TEST FREQUENCY
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/364 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
Related Searches:
SBR-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000105245
NSN
5961-00-010-5245
SBR-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000105245
NSN
5961-00-010-5245
MFG
SEMICON COMPONENTS INC
Description
MATERIAL: SILICON
OVERALL HEIGHT: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
Related Searches:
MR1243FL
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000105285
NSN
5961-00-010-5285
MR1243FL
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000105285
NSN
5961-00-010-5285
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SPECIAL FEATURES: SILICON MULTI-CELL RECTIFIER,DOUBLE CASED,EXTERNAL MOLDED CASE,INTERNAL METAL CASE,HERMETICALLY SEALED,COPPER PLATED BASE,BASE 3.000 IN. LG;3.000 IN. W;0.260 IN. H;MOLDED BODY DIM. 2.200 IN. DIA;0.740 IN. H;FOUR 0.281 IN. DIA MTG HOLES IN BASE SPACED ON
~1: 2.510 IN. MTG CENTERS,ONE LUG TERMINAL,M65.0 TO P190.0 DEG C OPERATING TEMP;STORAGE TEMP RANGE:MINUS 65.0 TO 190.0 DEG CELCIUS
Related Searches:
SC-C-599672-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000105285
NSN
5961-00-010-5285
SC-C-599672-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000105285
NSN
5961-00-010-5285
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SPECIAL FEATURES: SILICON MULTI-CELL RECTIFIER,DOUBLE CASED,EXTERNAL MOLDED CASE,INTERNAL METAL CASE,HERMETICALLY SEALED,COPPER PLATED BASE,BASE 3.000 IN. LG;3.000 IN. W;0.260 IN. H;MOLDED BODY DIM. 2.200 IN. DIA;0.740 IN. H;FOUR 0.281 IN. DIA MTG HOLES IN BASE SPACED ON
~1: 2.510 IN. MTG CENTERS,ONE LUG TERMINAL,M65.0 TO P190.0 DEG C OPERATING TEMP;STORAGE TEMP RANGE:MINUS 65.0 TO 190.0 DEG CELCIUS
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MR1243FLR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000105290
NSN
5961-00-010-5290
MR1243FLR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000105290
NSN
5961-00-010-5290
MFG
MOTOROLA INC CONTROL SYSTEMS DIV
Description
III END ITEM IDENTIFICATION: CREW-SERVED NIGHT SIGHTS
Related Searches:
SC-C-599672
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000105290
NSN
5961-00-010-5290
SC-C-599672
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000105290
NSN
5961-00-010-5290
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: CREW-SERVED NIGHT SIGHTS
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305-0264
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000107590
NSN
5961-00-010-7590
305-0264
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961000107590
NSN
5961-00-010-7590
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
MATERIAL: SILICON
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2N2917
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000111243
NSN
5961-00-011-1243
2N2917
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000111243
NSN
5961-00-011-1243
MFG
ADELCO ELEKTRONIK GMBH
Description
MANUFACTURERS CODE: 03024
MFR SOURCE CONTROLLING REFERENCE: VCD0024
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
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SA2206
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000111243
NSN
5961-00-011-1243
SA2206
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000111243
NSN
5961-00-011-1243
MFG
TELCOM SEMICONDUCTOR INC
Description
MANUFACTURERS CODE: 03024
MFR SOURCE CONTROLLING REFERENCE: VCD0024
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
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SP10684
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000111243
NSN
5961-00-011-1243
SP10684
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000111243
NSN
5961-00-011-1243
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
MANUFACTURERS CODE: 03024
MFR SOURCE CONTROLLING REFERENCE: VCD0024
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
VCD0024
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000111243
NSN
5961-00-011-1243
VCD0024
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961000111243
NSN
5961-00-011-1243
MFG
SENIOR OPERATIONS INC DBA KETEMA AEROSPACE
Description
MANUFACTURERS CODE: 03024
MFR SOURCE CONTROLLING REFERENCE: VCD0024
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
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DMS 77025B
TRANSISTOR
NSN, MFG P/N
5961000111609
NSN
5961-00-011-1609
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SA2206
TRANSISTOR
NSN, MFG P/N
5961000111609
NSN
5961-00-011-1609
MFG
TELEDYNE TECHNOLOGIES INCORPORATED DBA TELEDYNE MICROELECTRONIC TECHNOLOGIES DIV MARINA DEL REY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
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1193001P1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000111644
NSN
5961-00-011-1644
1193001P1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000111644
NSN
5961-00-011-1644
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 07187
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 2579282-2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2579282-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000111644
NSN
5961-00-011-1644
2579282-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000111644
NSN
5961-00-011-1644
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 07187
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 2579282-2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKOVER VOLTAGE, DC
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2N886
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000111644
NSN
5961-00-011-1644
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 07187
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 2579282-2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKOVER VOLTAGE, DC
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11-750-00-850
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000113581
NSN
5961-00-011-3581
11-750-00-850
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000113581
NSN
5961-00-011-3581
MFG
NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1838
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-364
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.432 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 13.5 GHZ TEST FREQUENCY
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/364 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
Related Searches:
1N1838
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000113581
NSN
5961-00-011-3581
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1838
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-364
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.432 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 13.5 GHZ TEST FREQUENCY
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/364 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
Related Searches:
DMS 81070B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000113581
NSN
5961-00-011-3581
DMS 81070B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000113581
NSN
5961-00-011-3581
MFG
DLA LAND AND MARITIME
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1838
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-364
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.432 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 13.5 GHZ TEST FREQUENCY
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/364 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
Related Searches:
JAN1N1838
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000113581
NSN
5961-00-011-3581
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1838
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-364
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.432 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 13.5 GHZ TEST FREQUENCY
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/364 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION