My Quote Request
5961-00-220-2206
20 Products
Z1089
TRANSISTOR
NSN, MFG P/N
5961002202206
NSN
5961-00-220-2206
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1089
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1300176-1
TRANSISTOR
NSN, MFG P/N
5961002164420
NSN
5961-00-216-4420
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN ELECTRONIC SYSTEMS DIVISION DIV SPACE & ISR SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 0.850 INCHES NOMINAL
OVERALL LENGTH: 1.480 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.870 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 70143-1300176 DRAWING
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 40.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 120.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 0.6 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
186SVA385
TRANSISTOR
NSN, MFG P/N
5961002164420
NSN
5961-00-216-4420
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 0.850 INCHES NOMINAL
OVERALL LENGTH: 1.480 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.870 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 70143-1300176 DRAWING
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 40.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 120.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 0.6 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
SA1016
TRANSISTOR
NSN, MFG P/N
5961002164420
NSN
5961-00-216-4420
MFG
SYNTAR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 0.850 INCHES NOMINAL
OVERALL LENGTH: 1.480 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.870 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 70143-1300176 DRAWING
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 40.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 120.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 0.6 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
1711954-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002164762
NSN
5961-00-216-4762
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6084-1020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002164845
NSN
5961-00-216-4845
MFG
GENRAD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
353-0502-020
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002167342
NSN
5961-00-216-7342
353-0502-020
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002167342
NSN
5961-00-216-7342
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.000 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 67-0261
MANUFACTURERS CODE: 81483
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 4.810 INCHES MAXIMUM
OVERALL LENGTH: 14.750 INCHES MAXIMUM
OVERALL WIDTH: 6.880 INCHES MAXIMUM
SPECIAL FEATURES: FOUR 0.375 IN.DIA MTG HOLES ON 5.590 IN.BY 11.000 IN.MTG;ENVIRONMENTAL PROTECTION:FUNGUS;INCLOSURE FEATURE:PARTIALLY INCLOSED;STACK QTY:2
TERMINAL TYPE AND QUANTITY: 6 TERMINAL LUG
THE MANUFACTURERS DATA:
Related Searches:
67-0261
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002167342
NSN
5961-00-216-7342
67-0261
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002167342
NSN
5961-00-216-7342
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.000 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 67-0261
MANUFACTURERS CODE: 81483
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 4.810 INCHES MAXIMUM
OVERALL LENGTH: 14.750 INCHES MAXIMUM
OVERALL WIDTH: 6.880 INCHES MAXIMUM
SPECIAL FEATURES: FOUR 0.375 IN.DIA MTG HOLES ON 5.590 IN.BY 11.000 IN.MTG;ENVIRONMENTAL PROTECTION:FUNGUS;INCLOSURE FEATURE:PARTIALLY INCLOSED;STACK QTY:2
TERMINAL TYPE AND QUANTITY: 6 TERMINAL LUG
THE MANUFACTURERS DATA:
Related Searches:
2N4000
TRANSISTOR
NSN, MFG P/N
5961002171208
NSN
5961-00-217-1208
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5142 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
MIS-18698/092-01Z
TRANSISTOR
NSN, MFG P/N
5961002176374
NSN
5961-00-217-6374
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS-18698/092-01Z
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INTERNAL CONFIGURATION: UNIJUNCTION
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
8020912
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002180737
NSN
5961-00-218-0737
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 8020912
INPUT TERMINAL TYPE: WAVEGUIDE FLANGE
MANUFACTURERS CODE: 18876
OPERATING FREQUENCY: 8.5 GIGAHERTZ NOMINAL
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
THE MANUFACTURERS DATA:
Related Searches:
1100-50-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002194386
NSN
5961-00-219-4386
MFG
AVTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: 1100-50-5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 30242
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
D5253B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002196233
NSN
5961-00-219-6233
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.082 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
SM-A-748798-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002196233
NSN
5961-00-219-6233
SM-A-748798-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002196233
NSN
5961-00-219-6233
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.082 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
1106-0936
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002197439
NSN
5961-00-219-7439
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
1107-0240
TRANSISTOR
NSN, MFG P/N
5961002197441
NSN
5961-00-219-7441
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
DESIGN CONTROL REFERENCE: 1107-0240
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 08241
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
0007-9108
TRANSISTOR
NSN, MFG P/N
5961002197482
NSN
5961-00-219-7482
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
DESIGN CONTROL REFERENCE: 1179-1084
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 08241
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
79108
TRANSISTOR
NSN, MFG P/N
5961002197482
NSN
5961-00-219-7482
MFG
TYCO ELECTRONICS CORPORATION DIV RAYCHEM
Description
DESIGN CONTROL REFERENCE: 1179-1084
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 08241
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
Z1001
TRANSISTOR
NSN, MFG P/N
5961002202185
NSN
5961-00-220-2185
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
Z1090
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961002202186
NSN
5961-00-220-2186
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1090
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD