My Quote Request
5961-00-238-6988
20 Products
Z1057
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386988
NSN
5961-00-238-6988
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1057
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
RE1062
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002383817
NSN
5961-00-238-3817
RE1062
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002383817
NSN
5961-00-238-3817
MFG
RECTIFIER ENGINEERING AND SUPPLY CO INC
Description
MATERIAL: SILICON
OVERALL HEIGHT: 0.625 INCHES NOMINAL
OVERALL LENGTH: 2.906 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
14-000-201PC24
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002383819
NSN
5961-00-238-3819
14-000-201PC24
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002383819
NSN
5961-00-238-3819
MFG
ALLIS-CHALMERS CORP
Description
MATERIAL: SILICON
Related Searches:
A86379
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002383819
NSN
5961-00-238-3819
A86379
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002383819
NSN
5961-00-238-3819
MFG
DEAN TECHNOLOGY INC. DBA CKE
Description
MATERIAL: SILICON
Related Searches:
RE1061
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002383819
NSN
5961-00-238-3819
RE1061
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002383819
NSN
5961-00-238-3819
MFG
RECTIFIER ENGINEERING AND SUPPLY CO INC
Description
MATERIAL: SILICON
Related Searches:
14-000-201PC25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002383821
NSN
5961-00-238-3821
14-000-201PC25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002383821
NSN
5961-00-238-3821
MFG
ALLIS-CHALMERS CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
RE1063
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002383821
NSN
5961-00-238-3821
MFG
RECTIFIER ENGINEERING AND SUPPLY CO INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
10118-01
TRANSISTOR
NSN, MFG P/N
5961002383824
NSN
5961-00-238-3824
MFG
XEROX CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
DMS 77025B
TRANSISTOR
NSN, MFG P/N
5961002383824
NSN
5961-00-238-3824
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
U1899
TRANSISTOR
NSN, MFG P/N
5961002383824
NSN
5961-00-238-3824
MFG
TELCOM SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
MRD310
TRANSISTOR
NSN, MFG P/N
5961002384598
NSN
5961-00-238-4598
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC
Related Searches:
423-800210
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002386871
NSN
5961-00-238-6871
423-800210
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961002386871
NSN
5961-00-238-6871
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV MISSILE SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 6.0 MAXIMUM ALL TRANSISTOR
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND -2.00 NANOAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM ON-STATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -45.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -6.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
423-800117
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386881
NSN
5961-00-238-6881
423-800117
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386881
NSN
5961-00-238-6881
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV MISSILE SYSTEMS
Description
DESIGN CONTROL REFERENCE: FN776
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 17856
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
FN776
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386881
NSN
5961-00-238-6881
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
DESIGN CONTROL REFERENCE: FN776
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 17856
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
423-800215
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961002386889
NSN
5961-00-238-6889
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV MISSILE SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE P-CHANNEL JUNCTION TYPE
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: FIELD EFFECT ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.210 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE 1ST TRANSISTOR 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE 2ND TRANSISTOR
Related Searches:
Z927
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386931
NSN
5961-00-238-6931
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z927
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
Z928
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386970
NSN
5961-00-238-6970
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z928
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12255
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
Z1032
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386971
NSN
5961-00-238-6971
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1032
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
Z1040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386974
NSN
5961-00-238-6974
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1040
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY NAVORD OD41152
Related Searches:
Z1417
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002386977
NSN
5961-00-238-6977
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1417
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152