My Quote Request
5961-00-410-1423
20 Products
GC551
TRANSISTOR
NSN, MFG P/N
5961004101423
NSN
5961-00-410-1423
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1N5073
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004099968
NSN
5961-00-409-9968
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5203 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
2VR18A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004099968
NSN
5961-00-409-9968
MFG
ST-SEMICON INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5203 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
UZ718
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004099968
NSN
5961-00-409-9968
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5203 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
P315R2
TRANSISTOR
NSN, MFG P/N
5961004100342
NSN
5961-00-410-0342
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1991150-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100403
NSN
5961-00-410-0403
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
UZ5808
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100403
NSN
5961-00-410-0403
MFG
MICRO USPD INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
C200039340
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004100416
NSN
5961-00-410-0416
C200039340
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004100416
NSN
5961-00-410-0416
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
2606897-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100484
NSN
5961-00-410-0484
MFG
ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SV4354
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100484
NSN
5961-00-410-0484
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
953C129
TRANSISTOR
NSN, MFG P/N
5961004100827
NSN
5961-00-410-0827
MFG
AVIONICS SPECIALTIES INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 10639
MFR SOURCE CONTROLLING REFERENCE: 953C129
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
NS1849
TRANSISTOR
NSN, MFG P/N
5961004100827
NSN
5961-00-410-0827
MFG
NATIONAL SEMICONDUCTOR CORP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 10639
MFR SOURCE CONTROLLING REFERENCE: 953C129
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N5937A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100828
NSN
5961-00-410-0828
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 10639
MFR SOURCE CONTROLLING REFERENCE: 953C192-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
953C192-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100828
NSN
5961-00-410-0828
MFG
AVIONICS SPECIALTIES INC.
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 10639
MFR SOURCE CONTROLLING REFERENCE: 953C192-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
GN36
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100828
NSN
5961-00-410-0828
MFG
BERNHARD MEINERS INC
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 10639
MFR SOURCE CONTROLLING REFERENCE: 953C192-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
953-0192-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100829
NSN
5961-00-410-0829
953-0192-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100829
NSN
5961-00-410-0829
MFG
AVIONICS SPECIALTIES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10639
MFR SOURCE CONTROLLING REFERENCE: 953C192-2
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
GN50
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004100829
NSN
5961-00-410-0829
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10639
MFR SOURCE CONTROLLING REFERENCE: 953C192-2
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N1762
TRANSISTOR
NSN, MFG P/N
5961004101115
NSN
5961-00-410-1115
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 95.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.789 INCHES NOMINAL
OVERALL LENGTH: 0.288 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 28.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3324 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
36A224800P2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004101422
NSN
5961-00-410-1422
36A224800P2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004101422
NSN
5961-00-410-1422
MFG
GENERAL ELECTRIC CO DIRECT CURRENT MOTOR AND GENERATOR DEPT
Description
MATERIAL: SILICON
Related Searches:
42X230
TRANSISTOR
NSN, MFG P/N
5961004101423
NSN
5961-00-410-1423
MFG
AEIRE CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON