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5961-00-424-6942
20 Products
69210
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004246942
NSN
5961-00-424-6942
MFG
SIGNATURE INDUSTRIES LTD RADIO PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5107 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N4935A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004246942
NSN
5961-00-424-6942
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5107 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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5014166-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004246942
NSN
5961-00-424-6942
5014166-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004246942
NSN
5961-00-424-6942
MFG
THALES TRAINING & SIMULATION LTD
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5107 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004248977
NSN
5961-00-424-8977
G775-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004248977
NSN
5961-00-424-8977
MFG
SOLITRON DEVICES INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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2994850
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004249172
NSN
5961-00-424-9172
2994850
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004249172
NSN
5961-00-424-9172
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKOVER VOLTAGE, DC
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004249172
NSN
5961-00-424-9172
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004249172
NSN
5961-00-424-9172
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKOVER VOLTAGE, DC
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77320
RECTIFIER
NSN, MFG P/N
5961004249337
NSN
5961-00-424-9337
MFG
PRESTOLITE ELECTRIC INC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: METAL; SILICON; 1 RECTIFIER; 1 LEAD; 1 WIRE,CONNECTOR
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RECTIFIER
NSN, MFG P/N
5961004249337
NSN
5961-00-424-9337
MFG
PRESTOLITE ELECTRIC INCORPORATED
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: METAL; SILICON; 1 RECTIFIER; 1 LEAD; 1 WIRE,CONNECTOR
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77325
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004249338
NSN
5961-00-424-9338
MFG
PRESTOLITE ELECTRIC INCORPORATED
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004249338
NSN
5961-00-424-9338
A051077325
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004249338
NSN
5961-00-424-9338
MFG
PRESTOLITE ELECTRIC INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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1853-0252
TRANSISTOR
NSN, MFG P/N
5961004249411
NSN
5961-00-424-9411
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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SJ1798
TRANSISTOR
NSN, MFG P/N
5961004249411
NSN
5961-00-424-9411
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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419R414H01
TRANSISTOR
NSN, MFG P/N
5961004249476
NSN
5961-00-424-9476
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
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459068
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004249479
NSN
5961-00-424-9479
MFG
POMPES SALMSON SA
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004249479
NSN
5961-00-424-9479
LCT5560235-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004249479
NSN
5961-00-424-9479
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
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TFR110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004249479
NSN
5961-00-424-9479
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
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5560004
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004249486
NSN
5961-00-424-9486
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004249486
NSN
5961-00-424-9486
MFG
THALES DEFENCE DEUTSCHLAND GMBH
Description
SEMICONDUCTOR DEVICES,UNITIZED
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LCT5560004
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004249486
NSN
5961-00-424-9486
LCT5560004
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004249486
NSN
5961-00-424-9486
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICES,UNITIZED
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004249486
NSN
5961-00-424-9486
UT652-212A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004249486
NSN
5961-00-424-9486
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
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459059
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004249523
NSN
5961-00-424-9523
MFG
POMPES SALMSON SA
Description
SEMICONDUCTOR DEVICE,DIODE

