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5961-00-424-6942

20 Products

69210

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004246942

NSN

5961-00-424-6942

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69210

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004246942

NSN

5961-00-424-6942

MFG

SIGNATURE INDUSTRIES LTD RADIO PRODUCTS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5107 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N4935A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004246942

NSN

5961-00-424-6942

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1N4935A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004246942

NSN

5961-00-424-6942

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5107 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

5014166-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004246942

NSN

5961-00-424-6942

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5014166-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004246942

NSN

5961-00-424-6942

MFG

THALES TRAINING & SIMULATION LTD

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5107 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

G775-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004248977

NSN

5961-00-424-8977

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G775-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004248977

NSN

5961-00-424-8977

MFG

SOLITRON DEVICES INC.

2994850

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004249172

NSN

5961-00-424-9172

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2994850

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004249172

NSN

5961-00-424-9172

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKOVER VOLTAGE, DC

MCR1718-5

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004249172

NSN

5961-00-424-9172

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MCR1718-5

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004249172

NSN

5961-00-424-9172

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKOVER VOLTAGE, DC

77320

RECTIFIER

NSN, MFG P/N

5961004249337

NSN

5961-00-424-9337

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77320

RECTIFIER

NSN, MFG P/N

5961004249337

NSN

5961-00-424-9337

MFG

PRESTOLITE ELECTRIC INC

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: METAL; SILICON; 1 RECTIFIER; 1 LEAD; 1 WIRE,CONNECTOR

79084

RECTIFIER

NSN, MFG P/N

5961004249337

NSN

5961-00-424-9337

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79084

RECTIFIER

NSN, MFG P/N

5961004249337

NSN

5961-00-424-9337

MFG

PRESTOLITE ELECTRIC INCORPORATED

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: METAL; SILICON; 1 RECTIFIER; 1 LEAD; 1 WIRE,CONNECTOR

77325

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004249338

NSN

5961-00-424-9338

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77325

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004249338

NSN

5961-00-424-9338

MFG

PRESTOLITE ELECTRIC INCORPORATED

A051077325

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004249338

NSN

5961-00-424-9338

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A051077325

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004249338

NSN

5961-00-424-9338

MFG

PRESTOLITE ELECTRIC INC

1853-0252

TRANSISTOR

NSN, MFG P/N

5961004249411

NSN

5961-00-424-9411

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1853-0252

TRANSISTOR

NSN, MFG P/N

5961004249411

NSN

5961-00-424-9411

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

SJ1798

TRANSISTOR

NSN, MFG P/N

5961004249411

NSN

5961-00-424-9411

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SJ1798

TRANSISTOR

NSN, MFG P/N

5961004249411

NSN

5961-00-424-9411

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

419R414H01

TRANSISTOR

NSN, MFG P/N

5961004249476

NSN

5961-00-424-9476

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419R414H01

TRANSISTOR

NSN, MFG P/N

5961004249476

NSN

5961-00-424-9476

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF

459068

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004249479

NSN

5961-00-424-9479

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459068

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004249479

NSN

5961-00-424-9479

MFG

POMPES SALMSON SA

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

LCT5560235-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004249479

NSN

5961-00-424-9479

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LCT5560235-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004249479

NSN

5961-00-424-9479

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

TFR110

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004249479

NSN

5961-00-424-9479

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TFR110

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004249479

NSN

5961-00-424-9479

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

5560004

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004249486

NSN

5961-00-424-9486

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5560004

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004249486

NSN

5961-00-424-9486

MFG

THALES DEFENCE DEUTSCHLAND GMBH

LCT5560004

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004249486

NSN

5961-00-424-9486

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LCT5560004

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004249486

NSN

5961-00-424-9486

MFG

ITT CORPORATION DBA ITT GILFILLAN

UT652-212A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004249486

NSN

5961-00-424-9486

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UT652-212A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004249486

NSN

5961-00-424-9486

MFG

MICRO USPD INC

459059

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004249523

NSN

5961-00-424-9523

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459059

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004249523

NSN

5961-00-424-9523

MFG

POMPES SALMSON SA