My Quote Request
5961-00-436-1083
20 Products
MDA920A2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
MDA920A2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES NOMINAL
OVERALL WIDTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
419570-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
419570-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES NOMINAL
OVERALL WIDTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
700115
TRANSISTOR
NSN, MFG P/N
5961004361346
NSN
5961-00-436-1346
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
BCD20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361347
NSN
5961-00-436-1347
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
57549200-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361391
NSN
5961-00-436-1391
57549200-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361391
NSN
5961-00-436-1391
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES MAXIMUM
OVERALL HEIGHT: 0.025 INCHES MAXIMUM
OVERALL LENGTH: 0.035 INCHES MAXIMUM
OVERALL WIDTH: 0.035 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
L1D869ST97020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361391
NSN
5961-00-436-1391
L1D869ST97020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361391
NSN
5961-00-436-1391
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES MAXIMUM
OVERALL HEIGHT: 0.025 INCHES MAXIMUM
OVERALL LENGTH: 0.035 INCHES MAXIMUM
OVERALL WIDTH: 0.035 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
6084-1031
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361478
NSN
5961-00-436-1478
MFG
GENRAD INC
Description
CAPACITANCE RATING IN PICOFARADS: 47.0 NOMINAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-226AC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
CR202111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361478
NSN
5961-00-436-1478
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
CAPACITANCE RATING IN PICOFARADS: 47.0 NOMINAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-226AC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
MV2111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361478
NSN
5961-00-436-1478
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CAPACITANCE RATING IN PICOFARADS: 47.0 NOMINAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-226AC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
0405590008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361547
NSN
5961-00-436-1547
0405590008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361547
NSN
5961-00-436-1547
MFG
SUNAIR ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N1184R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/297
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/297 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
24561602
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361547
NSN
5961-00-436-1547
MFG
CONTROL DATA SYSTEMS INC CONTRACTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N1184R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/297
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/297 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX1N1184R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361547
NSN
5961-00-436-1547
JANTX1N1184R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361547
NSN
5961-00-436-1547
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N1184R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/297
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/297 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N2167
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361693
NSN
5961-00-436-1693
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
849-001-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361693
NSN
5961-00-436-1693
849-001-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361693
NSN
5961-00-436-1693
MFG
PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
IC3500A411CG1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004361860
NSN
5961-00-436-1860
IC3500A411CG1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004361860
NSN
5961-00-436-1860
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
113596
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362222
NSN
5961-00-436-2222
113596
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362222
NSN
5961-00-436-2222
MFG
XEROX CORP XEROX DOCUMENTATION AND SOFTWARE SERVICES
Description
DESIGN CONTROL REFERENCE: 113596
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 18338
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
THE MANUFACTURERS DATA:
Related Searches:
SDS228
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362222
NSN
5961-00-436-2222
SDS228
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362222
NSN
5961-00-436-2222
MFG
BURKHARDT GMBH
Description
DESIGN CONTROL REFERENCE: 113596
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 18338
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
THE MANUFACTURERS DATA:
Related Searches:
132495
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362223
NSN
5961-00-436-2223
132495
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362223
NSN
5961-00-436-2223
MFG
GETRONICS GOVERNMENT SOLUTIONS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 6.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT AND 40.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.4 MAXIMUM FORWARD VOLTAGE, PEAK AND 2.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 2.2 MAXIMUM ON-STATE VOLTAGE, PEAK
Related Searches:
C234EX16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362223
NSN
5961-00-436-2223
C234EX16
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362223
NSN
5961-00-436-2223
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 6.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT AND 40.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.4 MAXIMUM FORWARD VOLTAGE, PEAK AND 2.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 2.2 MAXIMUM ON-STATE VOLTAGE, PEAK
Related Searches:
SDS236
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362223
NSN
5961-00-436-2223
SDS236
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004362223
NSN
5961-00-436-2223
MFG
XEROX CORP XEROX DOCUMENTATION AND SOFTWARE SERVICES
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 6.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT AND 40.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.4 MAXIMUM FORWARD VOLTAGE, PEAK AND 2.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 2.2 MAXIMUM ON-STATE VOLTAGE, PEAK