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5961-00-438-6711

20 Products

SP5757

TRANSISTOR

NSN, MFG P/N

5961004386711

NSN

5961-00-438-6711

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SP5757

TRANSISTOR

NSN, MFG P/N

5961004386711

NSN

5961-00-438-6711

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT MODEL F-14
INCLOSURE MATERIAL: METAL OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 742C2040-07-020
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

7528316P2

TRANSISTOR

NSN, MFG P/N

5961004384384

NSN

5961-00-438-4384

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7528316P2

TRANSISTOR

NSN, MFG P/N

5961004384384

NSN

5961-00-438-4384

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

1N746A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004384385

NSN

5961-00-438-4385

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1N746A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004384385

NSN

5961-00-438-4385

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99971
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 7060807P1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

555294.158//P

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004384385

NSN

5961-00-438-4385

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555294.158//P

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004384385

NSN

5961-00-438-4385

MFG

MARCONI MOBILE SPA EX ELMER SPA

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99971
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 7060807P1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

7060807P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004384385

NSN

5961-00-438-4385

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7060807P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004384385

NSN

5961-00-438-4385

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99971
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 7060807P1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

412R193G01

TRANSISTOR

NSN, MFG P/N

5961004385074

NSN

5961-00-438-5074

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412R193G01

TRANSISTOR

NSN, MFG P/N

5961004385074

NSN

5961-00-438-5074

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ONE HEAT DISSIPATOR; ONE WASHER-FLAT; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

67762-401-21

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004385748

NSN

5961-00-438-5748

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67762-401-21

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004385748

NSN

5961-00-438-5748

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM-30 MINUTEMAN
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: DESIGN ANALYSIS

67764-401-11

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004385749

NSN

5961-00-438-5749

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67764-401-11

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004385749

NSN

5961-00-438-5749

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM-30 MINUTEMAN
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: DESIGN ANALYSIS

16-601-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004385754

NSN

5961-00-438-5754

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16-601-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004385754

NSN

5961-00-438-5754

MFG

ROGERSON KRATOS

932053-1

TRANSISTOR

NSN, MFG P/N

5961004386389

NSN

5961-00-438-6389

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932053-1

TRANSISTOR

NSN, MFG P/N

5961004386389

NSN

5961-00-438-6389

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -40.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

C9408

TRANSISTOR

NSN, MFG P/N

5961004386389

NSN

5961-00-438-6389

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C9408

TRANSISTOR

NSN, MFG P/N

5961004386389

NSN

5961-00-438-6389

MFG

CRYSTALONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -40.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

SW7757

TRANSISTOR

NSN, MFG P/N

5961004386389

NSN

5961-00-438-6389

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SW7757

TRANSISTOR

NSN, MFG P/N

5961004386389

NSN

5961-00-438-6389

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -40.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

151-1025-00

TRANSISTOR

NSN, MFG P/N

5961004386452

NSN

5961-00-438-6452

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151-1025-00

TRANSISTOR

NSN, MFG P/N

5961004386452

NSN

5961-00-438-6452

MFG

SPACELABS-HILLSBORO OPERATIONS SQUIBB VITATEK INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL HEIGHT: 0.185 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

SBA8129

TRANSISTOR

NSN, MFG P/N

5961004386452

NSN

5961-00-438-6452

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SBA8129

TRANSISTOR

NSN, MFG P/N

5961004386452

NSN

5961-00-438-6452

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL HEIGHT: 0.185 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

151-1027-00

TRANSISTOR

NSN, MFG P/N

5961004386453

NSN

5961-00-438-6453

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151-1027-00

TRANSISTOR

NSN, MFG P/N

5961004386453

NSN

5961-00-438-6453

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

DN480A

TRANSISTOR

NSN, MFG P/N

5961004386453

NSN

5961-00-438-6453

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DN480A

TRANSISTOR

NSN, MFG P/N

5961004386453

NSN

5961-00-438-6453

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

FD1392A

TRANSISTOR

NSN, MFG P/N

5961004386453

NSN

5961-00-438-6453

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FD1392A

TRANSISTOR

NSN, MFG P/N

5961004386453

NSN

5961-00-438-6453

MFG

SOLITRON DEVICES INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

SFD1027

TRANSISTOR

NSN, MFG P/N

5961004386453

NSN

5961-00-438-6453

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SFD1027

TRANSISTOR

NSN, MFG P/N

5961004386453

NSN

5961-00-438-6453

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

2N4236

TRANSISTOR

NSN, MFG P/N

5961004386711

NSN

5961-00-438-6711

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2N4236

TRANSISTOR

NSN, MFG P/N

5961004386711

NSN

5961-00-438-6711

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT MODEL F-14
INCLOSURE MATERIAL: METAL OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 742C2040-07-020
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

742C2040-07-020

TRANSISTOR

NSN, MFG P/N

5961004386711

NSN

5961-00-438-6711

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742C2040-07-020

TRANSISTOR

NSN, MFG P/N

5961004386711

NSN

5961-00-438-6711

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT MODEL F-14
INCLOSURE MATERIAL: METAL OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 742C2040-07-020
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN