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5961-00-441-7896

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D5506

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004417896

NSN

5961-00-441-7896

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D5506

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004417896

NSN

5961-00-441-7896

MFG

SKYWORKS SOLUTIONS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.086 INCHES NOMINAL
OVERALL LENGTH: 0.082 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE

1N484A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402264

NSN

5961-00-440-2264

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1N484A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402264

NSN

5961-00-440-2264

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 31435
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 05-900105
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM REVERSE VOLTAGE, PEAK

G18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402264

NSN

5961-00-440-2264

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G18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402264

NSN

5961-00-440-2264

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 31435
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 05-900105
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM REVERSE VOLTAGE, PEAK

7901075-147

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402265

NSN

5961-00-440-2265

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7901075-147

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402265

NSN

5961-00-440-2265

MFG

GENERAL MOTORS CORP AC ROCHESTER DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

8-710211-585

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402265

NSN

5961-00-440-2265

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8-710211-585

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402265

NSN

5961-00-440-2265

MFG

LABINAL

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

CK949

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402265

NSN

5961-00-440-2265

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CK949

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402265

NSN

5961-00-440-2265

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

TM47

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402265

NSN

5961-00-440-2265

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TM47

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004402265

NSN

5961-00-440-2265

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

1N2096

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004404737

NSN

5961-00-440-4737

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1N2096

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004404737

NSN

5961-00-440-4737

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.408 INCHES MAXIMUM
OVERALL LENGTH: 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2290 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

1NI878A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004407944

NSN

5961-00-440-7944

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1NI878A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004407944

NSN

5961-00-440-7944

MFG

COMPONENTS INC SEMCOR DIV

Description

DESIGN CONTROL REFERENCE: INI878A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 06751
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2N1234

TRANSISTOR

NSN, MFG P/N

5961004407947

NSN

5961-00-440-7947

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2N1234

TRANSISTOR

NSN, MFG P/N

5961004407947

NSN

5961-00-440-7947

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

Description

DESIGN CONTROL REFERENCE: 2N1234
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 73293
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

LS35096-1

MOUNTING KIT,TRANSI

NSN, MFG P/N

5961004416106

NSN

5961-00-441-6106

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LS35096-1

MOUNTING KIT,TRANSI

NSN, MFG P/N

5961004416106

NSN

5961-00-441-6106

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 144-10 LUG; AN960-10L WASER,FLAT;DF 6C; DF3D; DF 6C; AN960-10L WASHER,FLAT; MS21042-3 NUT; OPERATING TEMPERATURE -65C TO +125C; KIT IS FOR MOUNTINGTO-64 AND DO-4 CASES; KIT INSTALLATIONWEIGHT 10-32 STUD-0.0065 LB

472-0546-011

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004416196

NSN

5961-00-441-6196

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472-0546-011

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004416196

NSN

5961-00-441-6196

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0546-011
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DESIGN ANALYSIS

770M2

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004416196

NSN

5961-00-441-6196

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770M2

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004416196

NSN

5961-00-441-6196

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0546-011
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DESIGN ANALYSIS

472-0546-014

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004416222

NSN

5961-00-441-6222

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472-0546-014

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004416222

NSN

5961-00-441-6222

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0546-014
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DESIGN ANALYSIS
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD

770M7

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004416222

NSN

5961-00-441-6222

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770M7

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004416222

NSN

5961-00-441-6222

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0546-014
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DESIGN ANALYSIS
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD

2678968-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004417877

NSN

5961-00-441-7877

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2678968-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004417877

NSN

5961-00-441-7877

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 450.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL HEIGHT: 0.825 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 TAB, SOLDER LUG

45524-200

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004417877

NSN

5961-00-441-7877

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45524-200

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004417877

NSN

5961-00-441-7877

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 450.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL HEIGHT: 0.825 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 TAB, SOLDER LUG

LHH9258

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004417877

NSN

5961-00-441-7877

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LHH9258

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004417877

NSN

5961-00-441-7877

MFG

DLA LAND AND MARITIME

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 450.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL HEIGHT: 0.825 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 TAB, SOLDER LUG

VTH200

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004417877

NSN

5961-00-441-7877

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VTH200

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004417877

NSN

5961-00-441-7877

MFG

MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 450.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 180.0 DEG CELSIUS
OVERALL HEIGHT: 0.825 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 TAB, SOLDER LUG

100423

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004417896

NSN

5961-00-441-7896

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100423

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004417896

NSN

5961-00-441-7896

MFG

BEI SENSORS & SYSTEMS COMPANY INC. DBA SYSTRON DONNER INERTIAL DIV SYSTRON DONNER INERTIAL DIVISION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.086 INCHES NOMINAL
OVERALL LENGTH: 0.082 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE