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5961-00-468-5260

20 Products

N185909-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685260

NSN

5961-00-468-5260

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N185909-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685260

NSN

5961-00-468-5260

MFG

GOODRICH CONTROL SYSTEMS LTD T/A GOO DRICH POWER SYSTEMS

SP6477

TRANSISTOR

NSN, MFG P/N

5961004683110

NSN

5961-00-468-3110

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SP6477

TRANSISTOR

NSN, MFG P/N

5961004683110

NSN

5961-00-468-3110

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 928460-101
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 82577
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.468 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SP3948

TRANSISTOR

NSN, MFG P/N

5961004683125

NSN

5961-00-468-3125

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SP3948

TRANSISTOR

NSN, MFG P/N

5961004683125

NSN

5961-00-468-3125

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

1N751

SEMICONDUCTOR,SPECI

NSN, MFG P/N

5961004683651

NSN

5961-00-468-3651

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1N751

SEMICONDUCTOR,SPECI

NSN, MFG P/N

5961004683651

NSN

5961-00-468-3651

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

353-2709-000

SEMICONDUCTOR,SPECI

NSN, MFG P/N

5961004683651

NSN

5961-00-468-3651

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353-2709-000

SEMICONDUCTOR,SPECI

NSN, MFG P/N

5961004683651

NSN

5961-00-468-3651

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

925515-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004683965

NSN

5961-00-468-3965

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925515-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004683965

NSN

5961-00-468-3965

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.125 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SA3317

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004683965

NSN

5961-00-468-3965

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SA3317

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004683965

NSN

5961-00-468-3965

MFG

SEMTECH CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.125 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

928384-101

TRANSISTOR

NSN, MFG P/N

5961004684089

NSN

5961-00-468-4089

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928384-101

TRANSISTOR

NSN, MFG P/N

5961004684089

NSN

5961-00-468-4089

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-928384 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE

F1661A

TRANSISTOR

NSN, MFG P/N

5961004684089

NSN

5961-00-468-4089

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F1661A

TRANSISTOR

NSN, MFG P/N

5961004684089

NSN

5961-00-468-4089

MFG

SOLITRON DEVICES INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-928384 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE

U1685

TRANSISTOR

NSN, MFG P/N

5961004684089

NSN

5961-00-468-4089

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U1685

TRANSISTOR

NSN, MFG P/N

5961004684089

NSN

5961-00-468-4089

MFG

TELCOM SEMICONDUCTOR INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-928384 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE

600239-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004684160

NSN

5961-00-468-4160

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600239-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004684160

NSN

5961-00-468-4160

MFG

EDO

Description

III END ITEM IDENTIFICATION: ATCBI4, AIR TRAFFIC CONTROL BEACON INTERROGATOR 4, FA-8470
SPECIAL FEATURES: FUNCTION: SWITCH, COAXIAL, SEMICONDUCTOR; REFERENCE DATA: 1A272, TI-6360.12A, FA-8470, ATCBI4, VOL 1, SEC 1-11, PG 10-94A/10-94B

FA7231-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004684160

NSN

5961-00-468-4160

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FA7231-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004684160

NSN

5961-00-468-4160

MFG

FEDERAL AVIATION ADMINISTRATION DBA F A A

Description

III END ITEM IDENTIFICATION: ATCBI4, AIR TRAFFIC CONTROL BEACON INTERROGATOR 4, FA-8470
SPECIAL FEATURES: FUNCTION: SWITCH, COAXIAL, SEMICONDUCTOR; REFERENCE DATA: 1A272, TI-6360.12A, FA-8470, ATCBI4, VOL 1, SEC 1-11, PG 10-94A/10-94B

MA8306-2L40T

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004684160

NSN

5961-00-468-4160

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MA8306-2L40T

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004684160

NSN

5961-00-468-4160

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

III END ITEM IDENTIFICATION: ATCBI4, AIR TRAFFIC CONTROL BEACON INTERROGATOR 4, FA-8470
SPECIAL FEATURES: FUNCTION: SWITCH, COAXIAL, SEMICONDUCTOR; REFERENCE DATA: 1A272, TI-6360.12A, FA-8470, ATCBI4, VOL 1, SEC 1-11, PG 10-94A/10-94B

MD15L12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004684160

NSN

5961-00-468-4160

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MD15L12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004684160

NSN

5961-00-468-4160

MFG

HERLEY INDUSTRIES INC. DBA HERLEY NEW ENGLAND

Description

III END ITEM IDENTIFICATION: ATCBI4, AIR TRAFFIC CONTROL BEACON INTERROGATOR 4, FA-8470
SPECIAL FEATURES: FUNCTION: SWITCH, COAXIAL, SEMICONDUCTOR; REFERENCE DATA: 1A272, TI-6360.12A, FA-8470, ATCBI4, VOL 1, SEC 1-11, PG 10-94A/10-94B

N185918-16

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685187

NSN

5961-00-468-5187

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N185918-16

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685187

NSN

5961-00-468-5187

MFG

GOODRICH CONTROL SYSTEMS LTD T/A GOO DRICH POWER SYSTEMS

1S117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685231

NSN

5961-00-468-5231

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1S117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685231

NSN

5961-00-468-5231

MFG

RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP

415-4-98180-005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685231

NSN

5961-00-468-5231

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415-4-98180-005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685231

NSN

5961-00-468-5231

MFG

EATON AEROSPACE LTD

N185911-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685231

NSN

5961-00-468-5231

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N185911-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685231

NSN

5961-00-468-5231

MFG

GOODRICH CONTROL SYSTEMS LTD T/A GOO DRICH POWER SYSTEMS

N185912-8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685259

NSN

5961-00-468-5259

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N185912-8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685259

NSN

5961-00-468-5259

MFG

GOODRICH CONTROL SYSTEMS LTD T/A GOO DRICH POWER SYSTEMS

1N825A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685260

NSN

5961-00-468-5260

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1N825A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004685260

NSN

5961-00-468-5260

MFG

INTERNATIONAL RECTIFIER CO GB LTD