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5961-00-519-2733

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2N3894

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005192733

NSN

5961-00-519-2733

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2N3894

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005192733

NSN

5961-00-519-2733

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 4500.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-93
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 4.692 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.231 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5099 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK

3008709-036-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005182572

NSN

5961-00-518-2572

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3008709-036-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005182572

NSN

5961-00-518-2572

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

C72061-Z9000-B271

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005182572

NSN

5961-00-518-2572

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C72061-Z9000-B271

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005182572

NSN

5961-00-518-2572

MFG

SIEMENS AG AUTOMATISIERUNGSTECHNIK AUT A13

Description

OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

MR2271

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005182572

NSN

5961-00-518-2572

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MR2271

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005182572

NSN

5961-00-518-2572

MFG

FREESCALE SEMICONDUCTOR INC.

Description

OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N138B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005183216

NSN

5961-00-518-3216

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1N138B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005183216

NSN

5961-00-518-3216

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TYPE NO. IP-372/TLR-3
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CATHODE MARKED BY RED DOT
SPECIFICATION/STANDARD DATA: 80131-RELEASE2026 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM REVERSE VOLTAGE, PEAK

L221979-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005183216

NSN

5961-00-518-3216

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L221979-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005183216

NSN

5961-00-518-3216

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TYPE NO. IP-372/TLR-3
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CATHODE MARKED BY RED DOT
SPECIFICATION/STANDARD DATA: 80131-RELEASE2026 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N332

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005183878

NSN

5961-00-518-3878

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1N332

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005183878

NSN

5961-00-518-3878

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N332 TYPE
SEMICONDUCTOR MATERIAL: SILICON

1N256

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005184499

NSN

5961-00-518-4499

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1N256

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005184499

NSN

5961-00-518-4499

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N256
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-194
NONDEFINITIVE SPEC/STD DATA: 1N256 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

A2133078

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005184499

NSN

5961-00-518-4499

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A2133078

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005184499

NSN

5961-00-518-4499

MFG

ITT CORPORATION

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N256
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-194
NONDEFINITIVE SPEC/STD DATA: 1N256 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

025-3-01-062

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005186593

NSN

5961-00-518-6593

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025-3-01-062

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005186593

NSN

5961-00-518-6593

MFG

L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

MZ500-20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005186593

NSN

5961-00-518-6593

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MZ500-20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005186593

NSN

5961-00-518-6593

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ11730-03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005187282

NSN

5961-00-518-7282

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SZ11730-03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005187282

NSN

5961-00-518-7282

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.009 MAXIMUM REGULATOR VOLTAGE, DC

SZ11976

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005187283

NSN

5961-00-518-7283

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SZ11976

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005187283

NSN

5961-00-518-7283

MFG

FREESCALE SEMICONDUCTOR INC.

SR2096

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005187284

NSN

5961-00-518-7284

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SR2096

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961005187284

NSN

5961-00-518-7284

MFG

FREESCALE SEMICONDUCTOR INC.

1510335

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

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1510335

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

MFG

COMPAQ FEDERAL LLC

Description

CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

48-00122-001

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

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48-00122-001

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

MFG

SHUGART CORP DBA INTL ASSEMBLY SPECIALISTS

Description

CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

499-016-011

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

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499-016-011

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

91557

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

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91557

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

MFG

TANDEM COMPUTERS INC

Description

CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

MJ802

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

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MJ802

TRANSISTOR

NSN, MFG P/N

5961005187344

NSN

5961-00-518-7344

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

4JA211BC1AC1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961005192226

NSN

5961-00-519-2226

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4JA211BC1AC1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961005192226

NSN

5961-00-519-2226

MFG

GENERAL ELECTRIC CO

Description

MATERIAL: GERMANIUM
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG