My Quote Request
5961-00-553-5388
20 Products
S6431M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005535388
NSN
5961-00-553-5388
S6431M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005535388
NSN
5961-00-553-5388
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
DESIGN CONTROL REFERENCE: 582R414H01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.412 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
9175519
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005534364
NSN
5961-00-553-4364
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N537 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
P32600028
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005534364
NSN
5961-00-553-4364
MFG
ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N537 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
928100-15
TRANSISTOR
NSN, MFG P/N
5961005534402
NSN
5961-00-553-4402
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
J313
TRANSISTOR
NSN, MFG P/N
5961005534402
NSN
5961-00-553-4402
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
ST4120
TRANSISTOR
NSN, MFG P/N
5961005534402
NSN
5961-00-553-4402
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
126438-01
TRANSISTOR
NSN, MFG P/N
5961005534820
NSN
5961-00-553-4820
MFG
GE AVIATION SYSTEMS LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1288976-1
TRANSISTOR
NSN, MFG P/N
5961005534820
NSN
5961-00-553-4820
MFG
HONEYWELL INTERNATIONAL INC. DBA HONEYWELL DIV SENSING & CONTROL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2088262-7
TRANSISTOR
NSN, MFG P/N
5961005534820
NSN
5961-00-553-4820
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N333
TRANSISTOR
NSN, MFG P/N
5961005534820
NSN
5961-00-553-4820
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
35498-1
TRANSISTOR
NSN, MFG P/N
5961005534820
NSN
5961-00-553-4820
MFG
MICROWAVE ENGINEERING CORPORATION DBA MICROWAVE RESEARCH
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
632232-2
TRANSISTOR
NSN, MFG P/N
5961005534820
NSN
5961-00-553-4820
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
N2088262-7
TRANSISTOR
NSN, MFG P/N
5961005534820
NSN
5961-00-553-4820
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1N21D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005535097
NSN
5961-00-553-5097
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM REGULATOR VOLTAGE
Related Searches:
2089088-0701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005535097
NSN
5961-00-553-5097
2089088-0701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005535097
NSN
5961-00-553-5097
MFG
BENDIX CORP THE
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM REGULATOR VOLTAGE
Related Searches:
8185648
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005535097
NSN
5961-00-553-5097
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM REGULATOR VOLTAGE
Related Searches:
1N415E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005535378
NSN
5961-00-553-5378
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: NO. 1N415E TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 BINDING POST
Related Searches:
AW7048-045-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005535378
NSN
5961-00-553-5378
AW7048-045-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005535378
NSN
5961-00-553-5378
MFG
SELEX COMMUNICATIONS GMBH
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: NO. 1N415E TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 BINDING POST
Related Searches:
582R414H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005535388
NSN
5961-00-553-5388
582R414H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005535388
NSN
5961-00-553-5388
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DESIGN CONTROL REFERENCE: 582R414H01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.412 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
800033-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005535388
NSN
5961-00-553-5388
800033-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005535388
NSN
5961-00-553-5388
MFG
RANTEC POWER SYSTEMS INC
Description
DESIGN CONTROL REFERENCE: 582R414H01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97942
OVERALL HEIGHT: 0.412 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA: