My Quote Request
5961-00-605-7997
20 Products
X18-3464
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057997
NSN
5961-00-605-7997
MFG
CLEVELAND MOTION CONTROLS INC. DBA C M C
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.430 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
99095327
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006056740
NSN
5961-00-605-6740
99095327
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006056740
NSN
5961-00-605-6740
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
SC5961-0032-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006056740
NSN
5961-00-605-6740
SC5961-0032-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006056740
NSN
5961-00-605-6740
MFG
DRS ICAS, LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
247ASC0555-001
TRANSISTOR
NSN, MFG P/N
5961006056892
NSN
5961-00-605-6892
MFG
NAVAL AIR SYSTEMS COMMAND
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SJ5410
TRANSISTOR
NSN, MFG P/N
5961006056892
NSN
5961-00-605-6892
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
247ASC0657-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057118
NSN
5961-00-605-7118
247ASC0657-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057118
NSN
5961-00-605-7118
MFG
NAVAL AIR SYSTEMS COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
45524-600F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057118
NSN
5961-00-605-7118
45524-600F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057118
NSN
5961-00-605-7118
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
247ASC1129-004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006057119
NSN
5961-00-605-7119
247ASC1129-004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006057119
NSN
5961-00-605-7119
MFG
NAVAL AIR SYSTEMS COMMAND
Description
MATERIAL: SILICON
SPECIAL FEATURES: HEAT SINK MOUNTED
Related Searches:
PBT100
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006057119
NSN
5961-00-605-7119
PBT100
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006057119
NSN
5961-00-605-7119
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
MATERIAL: SILICON
SPECIAL FEATURES: HEAT SINK MOUNTED
Related Searches:
247ASC0657-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057133
NSN
5961-00-605-7133
247ASC0657-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057133
NSN
5961-00-605-7133
MFG
NAVAL AIR SYSTEMS COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
45524-200F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057133
NSN
5961-00-605-7133
45524-200F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057133
NSN
5961-00-605-7133
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
247ASC1902-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057171
NSN
5961-00-605-7171
247ASC1902-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057171
NSN
5961-00-605-7171
MFG
NAVAL AIR SYSTEMS COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
UZ7720L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057171
NSN
5961-00-605-7171
MFG
MICRO USPD INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
099062
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006057229
NSN
5961-00-605-7229
MFG
LITTELFUSE INC.
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: M500
DESIGN CONTROL REFERENCE: 099062
INPUT TERMINAL TYPE: SOLDER LUG
MANUFACTURERS CODE: 75915
OUTPUT TERMINAL TYPE: SOLDER LUG
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.375 INCHES NOMINAL
OVERALL WIDTH: 0.641 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
A1148
TRANSISTOR
NSN, MFG P/N
5961006057798
NSN
5961-00-605-7798
MFG
ANALOG DEVICES INC. DIV GREENSBORO SITE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1901-0546
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057835
NSN
5961-00-605-7835
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FN1705
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057835
NSN
5961-00-605-7835
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
48A51591K
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006057946
NSN
5961-00-605-7946
48A51591K
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006057946
NSN
5961-00-605-7946
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
A65213
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006057946
NSN
5961-00-605-7946
A65213
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006057946
NSN
5961-00-605-7946
MFG
POWER DESIGNS INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
A390PB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006057997
NSN
5961-00-605-7997
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.430 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE