My Quote Request
5961-00-646-4804
20 Products
JAN1N254
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006464804
NSN
5961-00-646-4804
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N254
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-194
NONDEFINITIVE SPEC/STD DATA: 1N254 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
2N101
TRANSISTOR
NSN, MFG P/N
5961006465599
NSN
5961-00-646-5599
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE1416 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
2N101-13
TRANSISTOR
NSN, MFG P/N
5961006465599
NSN
5961-00-646-5599
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE1416 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SMB288305
TRANSISTOR
NSN, MFG P/N
5961006465599
NSN
5961-00-646-5599
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE1416 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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PS060
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006466461
NSN
5961-00-646-6461
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006467944
NSN
5961-00-646-7944
MFG
PLESSEY SOUTH AFRICA LTD
Description
DESIGN CONTROL REFERENCE: 1N21DR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
THE MANUFACTURERS DATA:
Related Searches:
1N21DR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006467944
NSN
5961-00-646-7944
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
DESIGN CONTROL REFERENCE: 1N21DR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
THE MANUFACTURERS DATA:
Related Searches:
720699-75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006469761
NSN
5961-00-646-9761
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD6147
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 05869
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HD6147
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006469761
NSN
5961-00-646-9761
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: HD6147
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 05869
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N82AG
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006471081
NSN
5961-00-647-1081
MFG
BIRD ELECTRONIC CORPORATION DIV BIRD TECHNOLOGIES GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
701363PC75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006472777
NSN
5961-00-647-2777
701363PC75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006472777
NSN
5961-00-647-2777
MFG
SPD ELECTRICAL SYSTEMS INC
Description
III END ITEM IDENTIFICATION: CIRCUIT BREAKER
Related Searches:
2990-5015
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006473263
NSN
5961-00-647-3263
2990-5015
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006473263
NSN
5961-00-647-3263
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 3.740 INCHES NOMINAL
Related Searches:
9061892
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006473263
NSN
5961-00-647-3263
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 3.740 INCHES NOMINAL
Related Searches:
489B1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006497108
NSN
5961-00-649-7108
MFG
DOVER DIVERSIFIED DE INC.
Description
MATERIAL: SILICON
Related Searches:
585-516-1855438REVAITEM22
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006497108
NSN
5961-00-649-7108
585-516-1855438REVAITEM22
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006497108
NSN
5961-00-649-7108
MFG
NAVAL SHIP SYSTEMS COMMAND
Description
MATERIAL: SILICON
Related Searches:
013-203
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006498900
NSN
5961-00-649-8900
MFG
AMPEX SYSTEMS CORP
Description
DESIGN CONTROL REFERENCE: HD6161
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
3263025-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006498900
NSN
5961-00-649-8900
3263025-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006498900
NSN
5961-00-649-8900
MFG
ORIGINAL ODHNER AB
Description
DESIGN CONTROL REFERENCE: HD6161
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
CD12629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006498900
NSN
5961-00-649-8900
MFG
TELCOM SEMICONDUCTOR INC
Description
DESIGN CONTROL REFERENCE: HD6161
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
DR1668
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006498900
NSN
5961-00-649-8900
MFG
GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS
Description
DESIGN CONTROL REFERENCE: HD6161
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HD6161
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006498900
NSN
5961-00-649-8900
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD6161
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: