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5961-00-673-5466

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1N749A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006735466

NSN

5961-00-673-5466

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1N749A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006735466

NSN

5961-00-673-5466

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: 1N749A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

9004029

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

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9004029

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N277
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

A7328

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

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A7328

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

MFG

AERONAUTICAL COMMUNICATIONS EQUIPMENT INC

Description

CURRENT RATING PER CHARACTERISTIC: 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N277
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

A850416G1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

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A850416G1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

MFG

SUPERIOR ELECTRIC HOLDING GROUP LLC DBA SUPERIOR ELECTRIC DIV DANAHER SENSORS & CONTROLS

Description

CURRENT RATING PER CHARACTERISTIC: 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N277
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

DR305

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

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DR305

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

MFG

SCOMILL INC

Description

CURRENT RATING PER CHARACTERISTIC: 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N277
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

DS100029-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

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DS100029-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N277
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

JAN1N277

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

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JAN1N277

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N277
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

P5214C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

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P5214C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N277
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

QG24

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

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QG24

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006696884

NSN

5961-00-669-6884

MFG

NAUTEL LIMITED

Description

CURRENT RATING PER CHARACTERISTIC: 270.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N277
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/201
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N98

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006697101

NSN

5961-00-669-7101

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1N98

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006697101

NSN

5961-00-669-7101

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1257 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK

J317

TRANSISTOR

NSN, MFG P/N

5961006700654

NSN

5961-00-670-0654

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J317

TRANSISTOR

NSN, MFG P/N

5961006700654

NSN

5961-00-670-0654

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: J317
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

743-900-061

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006712361

NSN

5961-00-671-2361

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743-900-061

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006712361

NSN

5961-00-671-2361

MFG

RAYTHEON COMPANY DBA RAYTHEON DIV MISSILE SYSTEMS

Description

DESIGN CONTROL REFERENCE: S5019
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 51589
OVERALL DIAMETER: 1.375 INCHES MAXIMUM
OVERALL LENGTH: 4.312 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:

S5019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006712361

NSN

5961-00-671-2361

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S5019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006712361

NSN

5961-00-671-2361

MFG

ST-SEMICON INC

Description

DESIGN CONTROL REFERENCE: S5019
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 51589
OVERALL DIAMETER: 1.375 INCHES MAXIMUM
OVERALL LENGTH: 4.312 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:

12Z7515-4

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006713017

NSN

5961-00-671-3017

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12Z7515-4

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006713017

NSN

5961-00-671-3017

MFG

NAVAL ORDNANCE STANDARDS

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: THREADED HOLE
MATERIAL: COPPER ALLOY
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED STUD SINGLE MOUNTING FACILITY
MOUNTING STUD LENGTH: 0.484 INCHES MINIMUM AND 0.516 INCHES MAXIMUM SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.250 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.172 INCHES MINIMUM AND 1.204 INCHES MAXIMUM
STYLE DESIGNATOR: 3C CYLINDRICAL
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNF SINGLE MOUNTING FACILITY

2515458

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006713017

NSN

5961-00-671-3017

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2515458

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006713017

NSN

5961-00-671-3017

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: THREADED HOLE
MATERIAL: COPPER ALLOY
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED STUD SINGLE MOUNTING FACILITY
MOUNTING STUD LENGTH: 0.484 INCHES MINIMUM AND 0.516 INCHES MAXIMUM SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.250 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.172 INCHES MINIMUM AND 1.204 INCHES MAXIMUM
STYLE DESIGNATOR: 3C CYLINDRICAL
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNF SINGLE MOUNTING FACILITY

308-1074P7

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006713017

NSN

5961-00-671-3017

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308-1074P7

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006713017

NSN

5961-00-671-3017

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: THREADED HOLE
MATERIAL: COPPER ALLOY
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED STUD SINGLE MOUNTING FACILITY
MOUNTING STUD LENGTH: 0.484 INCHES MINIMUM AND 0.516 INCHES MAXIMUM SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.250 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.172 INCHES MINIMUM AND 1.204 INCHES MAXIMUM
STYLE DESIGNATOR: 3C CYLINDRICAL
THREAD CLASS: 2A SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNF SINGLE MOUNTING FACILITY

SKS12464-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006725694

NSN

5961-00-672-5694

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SKS12464-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006725694

NSN

5961-00-672-5694

MFG

NAVCOM DEFENSE ELECTRONICS INC.

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.894 INCHES NOMINAL
OVERALL LENGTH: 3.312 INCHES NOMINAL
OVERALL WIDTH: 1.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

1N249R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006725966

NSN

5961-00-672-5966

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1N249R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006725966

NSN

5961-00-672-5966

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N249R TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

1N1753

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006733712

NSN

5961-00-673-3712

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1N1753

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006733712

NSN

5961-00-673-3712

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.33 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.547 INCHES NOMINAL
OVERALL LENGTH: 3.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4222 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.563 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N1413

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006735439

NSN

5961-00-673-5439

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1N1413

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006735439

NSN

5961-00-673-5439

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

DESIGN CONTROL REFERENCE: 1N1413
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: