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5961-00-754-5816
20 Products
SM-B-181088
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545816
NSN
5961-00-754-5816
SM-B-181088
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545816
NSN
5961-00-754-5816
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC AND 400.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.312 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
S362G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545816
NSN
5961-00-754-5816
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC AND 400.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.312 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MZ8-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545817
NSN
5961-00-754-5817
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
DESIGN CONTROL REFERENCE: MZ8-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N252
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545824
NSN
5961-00-754-5824
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N252
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1
NONDEFINITIVE SPEC/STD DATA: 1N252 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
352250009891
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545824
NSN
5961-00-754-5824
352250009891
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545824
NSN
5961-00-754-5824
MFG
THALES NEDERLAND
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N252
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1
NONDEFINITIVE SPEC/STD DATA: 1N252 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N1621
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545848
NSN
5961-00-754-5848
MFG
ST-SEMICON INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.59375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.563 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2208 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545848
NSN
5961-00-754-5848
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.59375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.563 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2208 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N466A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545851
NSN
5961-00-754-5851
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1846 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
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10018630-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545852
NSN
5961-00-754-5852
10018630-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545852
NSN
5961-00-754-5852
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1338 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N198
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545852
NSN
5961-00-754-5852
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1338 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1596113257P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
1596113257P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
MFG
SMA SEGNALAMENTO MARITTIMO AEREO AZIENDA DELLA GF - GALILEO SMA SRL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2071 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N2071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2071 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
219245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
MFG
RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2071 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
343-212-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
343-212-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2071 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
800986
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
MFG
NAI TECHNOLOGIES INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2071 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
F6-2484
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
MFG
ST-SEMICON INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2071 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
G181-628-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
G181-628-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2071 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
L2088489-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
L2088489-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545853
NSN
5961-00-754-5853
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2071 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
MILE1TYPE1N750A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545897
NSN
5961-00-754-5897
MILE1TYPE1N750A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545897
NSN
5961-00-754-5897
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILE1TYPE1N750A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NONDEFINITIVE SPEC/STD DATA: 1N750A TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N482B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007545921
NSN
5961-00-754-5921
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2026 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM REVERSE VOLTAGE, PEAK