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5961-00-805-7876
20 Products
SMC369237
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008057876
NSN
5961-00-805-7876
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2505 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
S555G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008057877
NSN
5961-00-805-7877
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: S555G
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
650C5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008057880
NSN
5961-00-805-7880
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 650C5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N1830
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008059136
NSN
5961-00-805-9136
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1830 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
Related Searches:
1N721
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008059140
NSN
5961-00-805-9140
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N721 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
652C2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008059143
NSN
5961-00-805-9143
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 652C2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
8950230-35
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008059147
NSN
5961-00-805-9147
8950230-35
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008059147
NSN
5961-00-805-9147
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV ADVANCED TECHNOLOGY LABORATORIES
Description
DESIGN CONTROL REFERENCE: 8950230-35
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 02734
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
9992837
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008060929
NSN
5961-00-806-0929
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
19-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008061094
NSN
5961-00-806-1094
MFG
PALOMAR PRODUCTS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2681 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N486B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008061094
NSN
5961-00-806-1094
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2681 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
ZL3016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008061094
NSN
5961-00-806-1094
MFG
SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2681 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
45L40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008061095
NSN
5961-00-806-1095
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.220 INCHES NOMINAL
OVERALL LENGTH: 1.060 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1442
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062044
NSN
5961-00-806-2044
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1442 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
40K
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062044
NSN
5961-00-806-2044
MFG
ST-SEMICON INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1442 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
A7316
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062044
NSN
5961-00-806-2044
MFG
AERONAUTICAL COMMUNICATIONS EQUIPMENT INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1442 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N696
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062045
NSN
5961-00-806-2045
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N696 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
9137010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062045
NSN
5961-00-806-2045
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N696 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
414-00151-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062050
NSN
5961-00-806-2050
414-00151-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062050
NSN
5961-00-806-2050
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
DESIGN CONTROL REFERENCE: SV1034
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
414-151-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062050
NSN
5961-00-806-2050
MFG
SAGEM TELECOMMUNICATIONS
Description
DESIGN CONTROL REFERENCE: SV1034
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SV1034
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008062050
NSN
5961-00-806-2050
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: SV1034
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: