My Quote Request
5961-00-811-4840
20 Products
666068-087
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114840
NSN
5961-00-811-4840
666068-087
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114840
NSN
5961-00-811-4840
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1811 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
10401737
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114842
NSN
5961-00-811-4842
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1811 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
13208E5774
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114842
NSN
5961-00-811-4842
13208E5774
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114842
NSN
5961-00-811-4842
MFG
CECOM LR CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1811 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N1084
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114842
NSN
5961-00-811-4842
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1811 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
B31622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114842
NSN
5961-00-811-4842
MFG
BOGUE ELECTRIC MANUFACTURING CO
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1811 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
M500
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114842
NSN
5961-00-811-4842
MFG
ST-SEMICON INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1811 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N618
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114844
NSN
5961-00-811-4844
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1733 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5576
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114844
NSN
5961-00-811-4844
MFG
BALLANTINE LABORATORIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1733 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
666065-292
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114844
NSN
5961-00-811-4844
666065-292
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114844
NSN
5961-00-811-4844
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1733 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N347
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114848
NSN
5961-00-811-4848
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N347 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
353-0235-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114848
NSN
5961-00-811-4848
353-0235-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114848
NSN
5961-00-811-4848
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N347 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
1N127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114852
NSN
5961-00-811-4852
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N127 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N150R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114853
NSN
5961-00-811-4853
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N15OR TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
Related Searches:
210822
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114853
NSN
5961-00-811-4853
MFG
RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N15OR TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
Related Searches:
JAN1N3009RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114860
NSN
5961-00-811-4860
JAN1N3009RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114860
NSN
5961-00-811-4860
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3009RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL DIAMETER: 0.255 INCHES MINIMUM AND 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN1N3009RBA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114860
NSN
5961-00-811-4860
JAN1N3009RBA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008114860
NSN
5961-00-811-4860
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3009RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL DIAMETER: 0.255 INCHES MINIMUM AND 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
352250009982
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008115799
NSN
5961-00-811-5799
352250009982
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008115799
NSN
5961-00-811-5799
MFG
THALES NEDERLAND
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1202
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
4178600-269
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008115799
NSN
5961-00-811-5799
4178600-269
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008115799
NSN
5961-00-811-5799
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1202
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
5M5532-221-55
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008115799
NSN
5961-00-811-5799
5M5532-221-55
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008115799
NSN
5961-00-811-5799
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1202
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
JAN1N1202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008115799
NSN
5961-00-811-5799
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1202
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/260
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE