My Quote Request
5961-00-816-3732
20 Products
DZ91219A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163732
NSN
5961-00-816-3732
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 5.0
Related Searches:
2125383PC20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163758
NSN
5961-00-816-3758
2125383PC20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163758
NSN
5961-00-816-3758
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2125383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CD3110123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163758
NSN
5961-00-816-3758
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2125383 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2125383PC12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163771
NSN
5961-00-816-3771
2125383PC12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163771
NSN
5961-00-816-3771
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
CD3110113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008163771
NSN
5961-00-816-3771
MFG
TELCOM SEMICONDUCTOR INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
119-0016
TRANSISTOR
NSN, MFG P/N
5961008164075
NSN
5961-00-816-4075
MFG
KEPCO INC.
Description
DESIGN CONTROL REFERENCE: 119-0016
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 85604
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
2264043
TRANSISTOR
NSN, MFG P/N
5961008164290
NSN
5961-00-816-4290
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
NS120
TRANSISTOR
NSN, MFG P/N
5961008164290
NSN
5961-00-816-4290
MFG
NATIONAL SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
44B252017-002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008164518
NSN
5961-00-816-4518
44B252017-002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008164518
NSN
5961-00-816-4518
MFG
GENICOM CORP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 11 MAGNETIC AMPLIFIER BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 9.120 INCHES NOMINAL
OVERALL WIDTH: 2.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
44B252082-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008164525
NSN
5961-00-816-4525
44B252082-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008164525
NSN
5961-00-816-4525
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL LENGTH: 11.880 INCHES NOMINAL
OVERALL WIDTH: 5.000 INCHES NOMINAL
Related Searches:
44B252436-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008164525
NSN
5961-00-816-4525
44B252436-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008164525
NSN
5961-00-816-4525
MFG
GENICOM CORP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL LENGTH: 11.880 INCHES NOMINAL
OVERALL WIDTH: 5.000 INCHES NOMINAL
Related Searches:
44B252436P1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008164525
NSN
5961-00-816-4525
44B252436P1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008164525
NSN
5961-00-816-4525
MFG
BAE SYSTEMS CONTROLS INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL LENGTH: 11.880 INCHES NOMINAL
OVERALL WIDTH: 5.000 INCHES NOMINAL
Related Searches:
67686-501
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961008164974
NSN
5961-00-816-4974
67686-501
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961008164974
NSN
5961-00-816-4974
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 67686-501
MAJOR COMPONENTS: SEMICONDUCTOR 1,BOARD 1,TERMINAL 6,DIODE 65
MANUFACTURERS CODE: 94756
OVERALL LENGTH: 8.000 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TESTFEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
1N1316A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008165315
NSN
5961-00-816-5315
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N1616
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008165316
NSN
5961-00-816-5316
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1616 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
Related Searches:
28436-318
TRANSISTOR
NSN, MFG P/N
5961008165426
NSN
5961-00-816-5426
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.313 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -125.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
28438-318
TRANSISTOR
NSN, MFG P/N
5961008165426
NSN
5961-00-816-5426
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.313 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -125.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
2S305
TRANSISTOR
NSN, MFG P/N
5961008165426
NSN
5961-00-816-5426
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.313 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -125.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
417-4-98052
TRANSISTOR
NSN, MFG P/N
5961008165426
NSN
5961-00-816-5426
MFG
KING TRAILERS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.313 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -125.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
632591
TRANSISTOR
NSN, MFG P/N
5961008165702
NSN
5961-00-816-5702
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN