My Quote Request
5961-00-831-6509
20 Products
SW6681
TRANSISTOR
NSN, MFG P/N
5961008316509
NSN
5961-00-831-6509
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7901700-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.100 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.062 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
S19683
TRANSISTOR
NSN, MFG P/N
5961008316509
NSN
5961-00-831-6509
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7901700-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.100 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.062 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SS450H
TRANSISTOR
NSN, MFG P/N
5961008316509
NSN
5961-00-831-6509
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MFR SOURCE CONTROLLING REFERENCE: 7901700-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.100 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.062 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1990-0044
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961008318518
NSN
5961-00-831-8518
MFG
HEWLETT PACKARD CO
Description
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); WASP CLASS LHD; FORRESTAL CLASS CV; ARLEIGH BURKE CLASS DDG; SPRUANCE CLASS DD (963); NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG
Related Searches:
5961008318518
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961008318518
NSN
5961-00-831-8518
5961008318518
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961008318518
NSN
5961-00-831-8518
MFG
E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES
Description
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); WASP CLASS LHD; FORRESTAL CLASS CV; ARLEIGH BURKE CLASS DDG; SPRUANCE CLASS DD (963); NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG
Related Searches:
CL905HN
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961008318518
NSN
5961-00-831-8518
MFG
CLAIREX ELECTRONICS DIV OF CLAIREX CORP
Description
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); WASP CLASS LHD; FORRESTAL CLASS CV; ARLEIGH BURKE CLASS DDG; SPRUANCE CLASS DD (963); NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG
Related Searches:
VT234
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961008318518
NSN
5961-00-831-8518
MFG
EG AND G VACTEC INC
Description
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); WASP CLASS LHD; FORRESTAL CLASS CV; ARLEIGH BURKE CLASS DDG; SPRUANCE CLASS DD (963); NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG
Related Searches:
06-01-30-826
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961008318676
NSN
5961-00-831-8676
06-01-30-826
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961008318676
NSN
5961-00-831-8676
MFG
B.V. NEDERLANDSE INSTRUMENTEN COMPAGNIE 'NEDINSCO'
Description
SPECIAL FEATURES: THREE-PHASE FULL-WAVE BRIDGE,6 DIODES INTERCONNECTED IN A MOLDED PLASTIC ENCAPSULATED CASE,HEXAGON SHAPED CASE,5 LUG TERMINALS,2-0.140 IN. DIA UNTHREADED MTG HOLES COUNTERBORED 0.250 IN. BY 0.125 IN. MTG HOLES SPACED 1.700 IN. MIN TO 1.750 IN. MAX C TO
~1: C;8.0 AMP DC OUTPUT CURRENT;100V PEAK REVERSE VOLTAGE PER CELL
Related Searches:
1039801E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961008318676
NSN
5961-00-831-8676
1039801E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961008318676
NSN
5961-00-831-8676
MFG
MBDA UK LTD
Description
SPECIAL FEATURES: THREE-PHASE FULL-WAVE BRIDGE,6 DIODES INTERCONNECTED IN A MOLDED PLASTIC ENCAPSULATED CASE,HEXAGON SHAPED CASE,5 LUG TERMINALS,2-0.140 IN. DIA UNTHREADED MTG HOLES COUNTERBORED 0.250 IN. BY 0.125 IN. MTG HOLES SPACED 1.700 IN. MIN TO 1.750 IN. MAX C TO
~1: C;8.0 AMP DC OUTPUT CURRENT;100V PEAK REVERSE VOLTAGE PER CELL
Related Searches:
MDA1505-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961008318676
NSN
5961-00-831-8676
MDA1505-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961008318676
NSN
5961-00-831-8676
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SPECIAL FEATURES: THREE-PHASE FULL-WAVE BRIDGE,6 DIODES INTERCONNECTED IN A MOLDED PLASTIC ENCAPSULATED CASE,HEXAGON SHAPED CASE,5 LUG TERMINALS,2-0.140 IN. DIA UNTHREADED MTG HOLES COUNTERBORED 0.250 IN. BY 0.125 IN. MTG HOLES SPACED 1.700 IN. MIN TO 1.750 IN. MAX C TO
~1: C;8.0 AMP DC OUTPUT CURRENT;100V PEAK REVERSE VOLTAGE PER CELL
Related Searches:
2N2880
TRANSISTOR
NSN, MFG P/N
5961008318791
NSN
5961-00-831-8791
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
TRANSISTOR
Related Searches:
539D956P1
TRANSISTOR
NSN, MFG P/N
5961008318791
NSN
5961-00-831-8791
MFG
BAE SYSTEMS CONTROLS INC.
Description
TRANSISTOR
Related Searches:
D5221E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008318994
NSN
5961-00-831-8994
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.070 INCHES MINIMUM AND 0.082 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.060 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
130997-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008319042
NSN
5961-00-831-9042
130997-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008319042
NSN
5961-00-831-9042
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SB1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008319042
NSN
5961-00-831-9042
MFG
SEMTECH CORPORATION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
P316CG23
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961008319070
NSN
5961-00-831-9070
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
SEMICONDUCTOR DEVIC
Related Searches:
1N2148
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008319134
NSN
5961-00-831-9134
MFG
BRADLEY SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-10
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.487 INCHES MAXIMUM
OVERALL LENGTH: 0.550 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.486 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2544 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N2149A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008319134
NSN
5961-00-831-9134
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-10
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.487 INCHES MAXIMUM
OVERALL LENGTH: 0.550 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.486 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2544 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
900120-178
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008319134
NSN
5961-00-831-9134
900120-178
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008319134
NSN
5961-00-831-9134
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-10
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.487 INCHES MAXIMUM
OVERALL LENGTH: 0.550 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.486 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2544 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N3504
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008319136
NSN
5961-00-831-9136
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N3504 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

