My Quote Request
5961-00-835-0470
20 Products
MA43538
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
906D765-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008348662
NSN
5961-00-834-8662
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3744 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1617859-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008349461
NSN
5961-00-834-9461
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
DESIGN CONTROL REFERENCE: MZ24T5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
MZ24A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008349461
NSN
5961-00-834-9461
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
DESIGN CONTROL REFERENCE: MZ24T5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2A100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350352
NSN
5961-00-835-0352
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-6453-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350352
NSN
5961-00-835-0352
353-6453-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350352
NSN
5961-00-835-0352
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1317
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350359
NSN
5961-00-835-0359
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
DESIGN CONTROL REFERENCE: 1N1317
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57057
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
9177215
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350359
NSN
5961-00-835-0359
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 1N1317
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57057
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N2195B
TRANSISTOR
NSN, MFG P/N
5961008350390
NSN
5961-00-835-0390
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3525 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
6096032
TRANSISTOR
NSN, MFG P/N
5961008350390
NSN
5961-00-835-0390
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3525 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
H50011
TRANSISTOR
NSN, MFG P/N
5961008350390
NSN
5961-00-835-0390
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3525 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
RELEASE3525
TRANSISTOR
NSN, MFG P/N
5961008350390
NSN
5961-00-835-0390
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3525 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
5082-0112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-0112-8257
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
5082-0112-8257
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
535794-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
RAYTHEON COMPANY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
600015-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
EDO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A444-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
AIKEN ADVANCED SYSTEMS INC A DIV OF AMSTAR TECHNICAL PRODUCTS INC AN AFFIL OF AMSTAR CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A4S112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
FEI MICROWAVE INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
C084514-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
C084514-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
GYRODYNE CO OF AMERICA INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
M0288C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008350470
NSN
5961-00-835-0470
MFG
SKYWORKS SOLUTIONS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); FORRESTAL CLASS CV; HELICOPTER, MH-35E; LOS ANGEELS CLASS SSN (688); AIRCRAFT, C-2A (REPROCURED); ARLEIGH BURKE CLASS DDG
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL LENGTH: 0.224 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC