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5961-00-866-8594
20 Products
2N336
TRANSISTOR
NSN, MFG P/N
5961008668594
NSN
5961-00-866-8594
MFG
ESCO INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 1.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
121431
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961008669688
NSN
5961-00-866-9688
121431
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961008669688
NSN
5961-00-866-9688
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SPECIAL FEATURES: METAL CASE;650.0 ZENER VOLTS;2.0 MA CURRENT;OPERATING TEMPERATURE MAX 60.0 DEGREE CELSIUS;3.188 IN. LG;1.000 IN. MAX W;1.000 IN. MAX H;THREE TURRET TYPE TERMINALS 0.562 IN. LG
Related Searches:
SZ10508
TRANSISTOR
NSN, MFG P/N
5961008671702
NSN
5961-00-867-1702
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SZ10509
TRANSISTOR
NSN, MFG P/N
5961008671703
NSN
5961-00-867-1703
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
249-426
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008675510
NSN
5961-00-867-5510
MFG
EATON CORPORATION DBA AEROSPACE & COMMERCIAL DIV DIV SENSING & CONTROLS DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
249-427
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008675511
NSN
5961-00-867-5511
MFG
EATON CORPORATION DBA AEROSPACE & COMMERCIAL DIV DIV SENSING & CONTROLS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
69-1054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008676872
NSN
5961-00-867-6872
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
S57-7778
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008676872
NSN
5961-00-867-6872
MFG
MILTOPE CORPORATION DBA VT MILTOPE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
12X663
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008676908
NSN
5961-00-867-6908
12X663
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008676908
NSN
5961-00-867-6908
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
577R066H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008676908
NSN
5961-00-867-6908
577R066H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008676908
NSN
5961-00-867-6908
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
SA2205
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008676908
NSN
5961-00-867-6908
SA2205
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008676908
NSN
5961-00-867-6908
MFG
TELCOM SEMICONDUCTOR INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
SP8322
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008676908
NSN
5961-00-867-6908
SP8322
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008676908
NSN
5961-00-867-6908
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
8899216
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008678894
NSN
5961-00-867-8894
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 8899216
MANUFACTURERS CODE: 18876
SPECIAL FEATURES: COMPONENT CONTROLLING AGENCY:MIL; COMPONENT IDENTIFYING NUMBER:TYPE NO. 1N591
THE MANUFACTURERS DATA:
Related Searches:
1901-0460
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008679206
NSN
5961-00-867-9206
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
6281
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008679206
NSN
5961-00-867-9206
MFG
C O D I CORP DBA CODI SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
STB523
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008679206
NSN
5961-00-867-9206
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1416CATHCASE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008679264
NSN
5961-00-867-9264
1416CATHCASE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008679264
NSN
5961-00-867-9264
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT AND 1.50 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.950 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1901-0416
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008679264
NSN
5961-00-867-9264
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT AND 1.50 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.950 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1901-0416PM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008679264
NSN
5961-00-867-9264
1901-0416PM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008679264
NSN
5961-00-867-9264
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT AND 1.50 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.950 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
15E106
TRANSISTOR
NSN, MFG P/N
5961008679319
NSN
5961-00-867-9319
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 28480-A-1853-0063-1 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN