My Quote Request
5961-00-871-7485
20 Products
VB0033
TRANSISTOR
NSN, MFG P/N
5961008717485
NSN
5961-00-871-7485
MFG
VOUGHT AIRCRAFT INDUSTRIES INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2N706C
TRANSISTOR
NSN, MFG P/N
5961008707823
NSN
5961-00-870-7823
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3084 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1N3313
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008707824
NSN
5961-00-870-7824
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 890.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3669 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N3313B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008707824
NSN
5961-00-870-7824
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 890.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3669 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN1N3313B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008707824
NSN
5961-00-870-7824
JAN1N3313B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008707824
NSN
5961-00-870-7824
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 890.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3669 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
13799
CAP,DIODE RETAINING
NSN, MFG P/N
5961008707928
NSN
5961-00-870-7928
MFG
MICROWAVE DEVELOPMENT LABORATORIES INC. DBA MDL
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CAP WHICH HOLDS A DIODE CRYSTAL; TYPE 1N23
Related Searches:
575R351H01
CAP,DIODE RETAINING
NSN, MFG P/N
5961008707928
NSN
5961-00-870-7928
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CAP WHICH HOLDS A DIODE CRYSTAL; TYPE 1N23
Related Searches:
G390093S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008708148
NSN
5961-00-870-8148
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
CURRENT RATING PER CHARACTERISTIC: 700.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.202 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SV2587
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008708148
NSN
5961-00-870-8148
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 700.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.202 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N5248A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008712540
NSN
5961-00-871-2540
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: 1N5248A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07263
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
GA53788
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008712540
NSN
5961-00-871-2540
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
DESIGN CONTROL REFERENCE: 1N5248A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07263
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
77207940PT1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008713546
NSN
5961-00-871-3546
77207940PT1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008713546
NSN
5961-00-871-3546
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
MATERIAL: PLASTIC POLYETHYLENE
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
Related Searches:
A51047
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008713546
NSN
5961-00-871-3546
MFG
THE DELBERT BLINN CO INC
Description
MATERIAL: PLASTIC POLYETHYLENE
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
Related Searches:
194019-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008716516
NSN
5961-00-871-6516
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
UZ5716
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008716516
NSN
5961-00-871-6516
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
QV0021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008717480
NSN
5961-00-871-7480
MFG
VOUGHT AIRCRAFT INDUSTRIES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
QV1105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008717481
NSN
5961-00-871-7481
MFG
VOUGHT AIRCRAFT INDUSTRIES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VB0025
TRANSISTOR
NSN, MFG P/N
5961008717482
NSN
5961-00-871-7482
MFG
B-K MEDICAL SYSTEMS INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
VB0032
TRANSISTOR
NSN, MFG P/N
5961008717483
NSN
5961-00-871-7483
MFG
B-K MEDICAL SYSTEMS INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
VB0034
TRANSISTOR
NSN, MFG P/N
5961008717484
NSN
5961-00-871-7484
MFG
VOUGHT AIRCRAFT INDUSTRIES INC.
Description
SEMICONDUCTOR MATERIAL: SILICON