My Quote Request
5961-00-879-9583
20 Products
RS4079
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008799583
NSN
5961-00-879-9583
MFG
HUGHEY & PHILLIPS INC DBA HONEYWELL AIRPORT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: 32H63
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
32H63
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008799583
NSN
5961-00-879-9583
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: 32H63
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N216
TRANSISTOR
NSN, MFG P/N
5961008799968
NSN
5961-00-879-9968
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
OVERALL WIDTH: 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE1713 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
B62039
TRANSISTOR
NSN, MFG P/N
5961008800187
NSN
5961-00-880-0187
MFG
POWER DESIGNS INC
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
FS696A
TRANSISTOR
NSN, MFG P/N
5961008800187
NSN
5961-00-880-0187
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
A63010A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008800189
NSN
5961-00-880-0189
A63010A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008800189
NSN
5961-00-880-0189
MFG
POWER DESIGNS INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
AS2056
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008800189
NSN
5961-00-880-0189
AS2056
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008800189
NSN
5961-00-880-0189
MFG
TELEDYNE TECHNOLOGIES INCORPORATED DBA TELEDYNE MICROELECTRONIC TECHNOLOGIES DIV MARINA DEL REY
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SSC4852
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008800189
NSN
5961-00-880-0189
SSC4852
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008800189
NSN
5961-00-880-0189
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
2N2323M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800228
NSN
5961-00-880-0228
2N2323M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800228
NSN
5961-00-880-0228
MFG
GENERAL ELECTRIC CO
Description
CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 38597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: PS842800007F001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C5FX99
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800228
NSN
5961-00-880-0228
C5FX99
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800228
NSN
5961-00-880-0228
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 38597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: PS842800007F001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
PS842800007F001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800228
NSN
5961-00-880-0228
PS842800007F001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800228
NSN
5961-00-880-0228
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 38597
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: PS842800007F001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
2N3006
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800459
NSN
5961-00-880-0459
2N3006
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800459
NSN
5961-00-880-0459
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.35 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4401 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
350818-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800459
NSN
5961-00-880-0459
350818-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008800459
NSN
5961-00-880-0459
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 0.35 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4401 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2N1207
TRANSISTOR
NSN, MFG P/N
5961008800577
NSN
5961-00-880-0577
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 80131-RELEASE4390 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 125.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2961874
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008800660
NSN
5961-00-880-0660
2961874
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008800660
NSN
5961-00-880-0660
MFG
CHAMPION AEROSPACE LLC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 3.875 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 1.937 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
515157
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008800660
NSN
5961-00-880-0660
515157
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008800660
NSN
5961-00-880-0660
MFG
DUCOMMUN TECHNOLOGIES INC. DBA AMERICAN ELECTRONICS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 3.875 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 1.937 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
1534862-20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008800913
NSN
5961-00-880-0913
1534862-20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008800913
NSN
5961-00-880-0913
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
196011P7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008800913
NSN
5961-00-880-0913
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
20-00223-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008800913
NSN
5961-00-880-0913
20-00223-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008800913
NSN
5961-00-880-0913
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
695266PC8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008800913
NSN
5961-00-880-0913
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0