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5961-00-890-8513

20 Products

4025582-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908513

NSN

5961-00-890-8513

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4025582-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908513

NSN

5961-00-890-8513

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 4025582-0501
MAJOR COMPONENTS: DIODE 140; PRINTED WIRING BD 1
MANUFACTURERS CODE: 06845
THE MANUFACTURERS DATA:

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66B2B152DW4

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907722

NSN

5961-00-890-7722

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66B2B152DW4

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907722

NSN

5961-00-890-7722

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 560.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411DB2AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 4.200 IN.C TO C;ENVIRONMENTAL PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

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7742813P007REVA

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907722

NSN

5961-00-890-7722

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7742813P007REVA

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907722

NSN

5961-00-890-7722

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 560.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411DB2AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 4.200 IN.C TO C;ENVIRONMENTAL PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

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7742813P7

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907722

NSN

5961-00-890-7722

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7742813P7

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907722

NSN

5961-00-890-7722

MFG

GENERAL ELECTRIC CO

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 560.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411DB2AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 4.200 IN.C TO C;ENVIRONMENTAL PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

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AD40B2A1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907722

NSN

5961-00-890-7722

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AD40B2A1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907722

NSN

5961-00-890-7722

MFG

COUGAR ELECTRONICS CORP

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 560.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411DB2AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 4.200 IN.C TO C;ENVIRONMENTAL PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

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4JA411MX190

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

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4JA411MX190

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

MFG

GENERAL ELECTRIC CO

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 7742813P8
MANUFACTURERS CODE: 03538
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 2.110 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 2.710 IN.C TO C;ENVIRONMENT PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

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66-6591

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

View More Info

66-6591

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 7742813P8
MANUFACTURERS CODE: 03538
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 2.110 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 2.710 IN.C TO C;ENVIRONMENT PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

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7742813P008REVA

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

View More Info

7742813P008REVA

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 7742813P8
MANUFACTURERS CODE: 03538
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 2.110 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 2.710 IN.C TO C;ENVIRONMENT PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

Related Searches:

7742813P8

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

View More Info

7742813P8

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 7742813P8
MANUFACTURERS CODE: 03538
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 2.110 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 2.710 IN.C TO C;ENVIRONMENT PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

Related Searches:

AD025-8

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

View More Info

AD025-8

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907723

NSN

5961-00-890-7723

MFG

GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 7742813P8
MANUFACTURERS CODE: 03538
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 2.110 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 2.710 IN.C TO C;ENVIRONMENT PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

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4JA411AB1AD1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907724

NSN

5961-00-890-7724

View More Info

4JA411AB1AD1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907724

NSN

5961-00-890-7724

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411AB1AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 3.510 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.BY 0.400 IN.MTG SLOTS SPACED 3.110 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;DC OUTPUT MAX VOLTAGE:62.0
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

Related Searches:

7742813P001REVA

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907724

NSN

5961-00-890-7724

View More Info

7742813P001REVA

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907724

NSN

5961-00-890-7724

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411AB1AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 3.510 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.BY 0.400 IN.MTG SLOTS SPACED 3.110 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;DC OUTPUT MAX VOLTAGE:62.0
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

Related Searches:

AD10B1A1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907724

NSN

5961-00-890-7724

View More Info

AD10B1A1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008907724

NSN

5961-00-890-7724

MFG

GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411AB1AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 3.510 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.BY 0.400 IN.MTG SLOTS SPACED 3.110 IN.C TO C;ENVIRONMENTAL PROTECTION:MOISTURE AND CORROSION;DC OUTPUT MAX VOLTAGE:62.0
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

Related Searches:

4015231-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908506

NSN

5961-00-890-8506

View More Info

4015231-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908506

NSN

5961-00-890-8506

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 4015231-0501
MAJOR COMPONENTS: DIODE 20; PRINTED CIRCUIT BD 1
MANUFACTURERS CODE: 06845
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 5.100 INCHES NOMINAL
OVERALL WIDTH: 5.620 INCHES NOMINAL
THE MANUFACTURERS DATA:

Related Searches:

4015232-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908507

NSN

5961-00-890-8507

View More Info

4015232-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908507

NSN

5961-00-890-8507

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 4015232-0501
MAJOR COMPONENTS: DIODE 30; PRINTED CIRCUIT BD 1
MANUFACTURERS CODE: 06845
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 5.100 INCHES NOMINAL
OVERALL WIDTH: 5.620 INCHES NOMINAL
THE MANUFACTURERS DATA:

Related Searches:

4015232-0502

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908508

NSN

5961-00-890-8508

View More Info

4015232-0502

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908508

NSN

5961-00-890-8508

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 4015232-0502
MAJOR COMPONENTS: DIODE 10; PRINTED CIRCUIT BD 1
MANUFACTURERS CODE: 06845
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 5.100 INCHES NOMINAL
OVERALL WIDTH: 5.620 INCHES NOMINAL
THE MANUFACTURERS DATA:

Related Searches:

4015232-0503

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908509

NSN

5961-00-890-8509

View More Info

4015232-0503

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908509

NSN

5961-00-890-8509

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 4015232-0503
MAJOR COMPONENTS: DIODE 30; PRINTED CIRCUIT BD 1
MANUFACTURERS CODE: 06845
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 5.100 INCHES NOMINAL
OVERALL WIDTH: 5.620 INCHES NOMINAL
THE MANUFACTURERS DATA:

Related Searches:

4015232-0504

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908510

NSN

5961-00-890-8510

View More Info

4015232-0504

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908510

NSN

5961-00-890-8510

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 4015232-0504
MAJOR COMPONENTS: DIODE 24; PRINTED CIRCUIT BD 1
MANUFACTURERS CODE: 06845
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 5.100 INCHES NOMINAL
OVERALL WIDTH: 5.620 INCHES NOMINAL
THE MANUFACTURERS DATA:

Related Searches:

4015236-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908511

NSN

5961-00-890-8511

View More Info

4015236-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908511

NSN

5961-00-890-8511

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 4015236-0501
MAJOR COMPONENTS: DIODE 20; PRINTED CIRCUIT BD 1
MANUFACTURERS CODE: 06845
OVERALL HEIGHT: 0.380 INCHES NOMINAL
OVERALL LENGTH: 5.100 INCHES NOMINAL
OVERALL WIDTH: 5.620 INCHES NOMINAL
THE MANUFACTURERS DATA:

Related Searches:

4025508-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908512

NSN

5961-00-890-8512

View More Info

4025508-0501

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008908512

NSN

5961-00-890-8512

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 4025508-0501
MAJOR COMPONENTS: DIODE 14; PRINTED CIRCUIT BD 1
MANUFACTURERS CODE: 06845
THE MANUFACTURERS DATA:

Related Searches: