My Quote Request
5961-00-914-2376
20 Products
54698
TRANSISTOR
NSN, MFG P/N
5961009142376
NSN
5961-00-914-2376
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 2N2727 TYPE
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4159 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N2713
TRANSISTOR
NSN, MFG P/N
5961009141148
NSN
5961-00-914-1148
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4159 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
AK0104296
TRANSISTOR
NSN, MFG P/N
5961009141148
NSN
5961-00-914-1148
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4159 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
140A602G04
KIT,TRANSISTOR,MTG
NSN, MFG P/N
5961009141196
NSN
5961-00-914-1196
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
III END ITEM IDENTIFICATION: KILAUEA CLASS T-AE 26, FORRESTAL CLASS CV, ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, WASP CLASS LHD, TICONDEROGA CLASS CG (47), LOS ANGELES CLASS SSN (688), NIMITZ CLASS CVN, TARAWA CLASS LHA
Related Searches:
2994842-2
KIT,TRANSISTOR,MTG
NSN, MFG P/N
5961009141196
NSN
5961-00-914-1196
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
III END ITEM IDENTIFICATION: KILAUEA CLASS T-AE 26, FORRESTAL CLASS CV, ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, WASP CLASS LHD, TICONDEROGA CLASS CG (47), LOS ANGELES CLASS SSN (688), NIMITZ CLASS CVN, TARAWA CLASS LHA
Related Searches:
034E51
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009141229
NSN
5961-00-914-1229
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
51007385
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009141229
NSN
5961-00-914-1229
MFG
CONTROL DATA CORP ROSEVILLE OPNS TERMINALS AND SMALL SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
MC244
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009141229
NSN
5961-00-914-1229
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2N827
TRANSISTOR
NSN, MFG P/N
5961009141375
NSN
5961-00-914-1375
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4281 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
3212092-10
TRANSISTOR
NSN, MFG P/N
5961009141375
NSN
5961-00-914-1375
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4281 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
C20U
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009141390
NSN
5961-00-914-1390
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.502 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.557 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
1N3582B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009141414
NSN
5961-00-914-1414
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3568 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N2508
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009142067
NSN
5961-00-914-2067
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4154 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
TRS301
TRANSISTOR
NSN, MFG P/N
5961009142087
NSN
5961-00-914-2087
MFG
INDUSTRO TRANSISTOR CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
1N703A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009142258
NSN
5961-00-914-2258
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: 4096-3121
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 09975
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
4096-3121
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009142258
NSN
5961-00-914-2258
MFG
UNISYS CORPORATION
Description
DESIGN CONTROL REFERENCE: 4096-3121
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 09975
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
632387-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009142259
NSN
5961-00-914-2259
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2N978
TRANSISTOR
NSN, MFG P/N
5961009142375
NSN
5961-00-914-2375
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N2727
TRANSISTOR
NSN, MFG P/N
5961009142376
NSN
5961-00-914-2376
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 2N2727 TYPE
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4159 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
400919
TRANSISTOR
NSN, MFG P/N
5961009142376
NSN
5961-00-914-2376
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 2N2727 TYPE
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4159 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN