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5961-00-925-9121

20 Products

2N2646

TRANSISTOR

NSN, MFG P/N

5961009259121

NSN

5961-00-925-9121

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2N2646

TRANSISTOR

NSN, MFG P/N

5961009259121

NSN

5961-00-925-9121

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

PC136A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258358

NSN

5961-00-925-8358

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PC136A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258358

NSN

5961-00-925-8358

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.124 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

8551030-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258359

NSN

5961-00-925-8359

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8551030-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258359

NSN

5961-00-925-8359

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 500.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.409 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.185 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

MA4022

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258359

NSN

5961-00-925-8359

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MA4022

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258359

NSN

5961-00-925-8359

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 500.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.409 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.185 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

PH129

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258359

NSN

5961-00-925-8359

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PH129

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258359

NSN

5961-00-925-8359

MFG

PARAMETRIC INDUSTRIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 500.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.409 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.185 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

8551030-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258360

NSN

5961-00-925-8360

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8551030-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258360

NSN

5961-00-925-8360

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 500.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.409 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.185 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

PH121A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258360

NSN

5961-00-925-8360

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PH121A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258360

NSN

5961-00-925-8360

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 500.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.409 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.185 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

66-6904

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258369

NSN

5961-00-925-8369

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66-6904

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258369

NSN

5961-00-925-8369

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/TRC-97
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.880 INCHES NOMINAL
OVERALL LENGTH: 5.500 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16000.0 MAXIMUM REVERSE VOLTAGE, PEAK

8498827-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258369

NSN

5961-00-925-8369

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8498827-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258369

NSN

5961-00-925-8369

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES

Description

CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/TRC-97
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.880 INCHES NOMINAL
OVERALL LENGTH: 5.500 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16000.0 MAXIMUM REVERSE VOLTAGE, PEAK

C66-6904

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258369

NSN

5961-00-925-8369

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C66-6904

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258369

NSN

5961-00-925-8369

MFG

CONDITIONING SEMICONDUCTOR DEVICES CORP /CSDC/

Description

CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/TRC-97
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.880 INCHES NOMINAL
OVERALL LENGTH: 5.500 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16000.0 MAXIMUM REVERSE VOLTAGE, PEAK

CR231

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258369

NSN

5961-00-925-8369

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CR231

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009258369

NSN

5961-00-925-8369

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/TRC-97
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.880 INCHES NOMINAL
OVERALL LENGTH: 5.500 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16000.0 MAXIMUM REVERSE VOLTAGE, PEAK

P3780

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009259079

NSN

5961-00-925-9079

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P3780

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009259079

NSN

5961-00-925-9079

MFG

TDK-LAMBDA AMERICAS INC. D IV HIGH POWER DIVISION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

2N2790

TRANSISTOR

NSN, MFG P/N

5961009259108

NSN

5961-00-925-9108

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2N2790

TRANSISTOR

NSN, MFG P/N

5961009259108

NSN

5961-00-925-9108

MFG

SEMICOA DBA SEMICOA SEMI CONDUCTORS

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4527 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N2970

TRANSISTOR

NSN, MFG P/N

5961009259108

NSN

5961-00-925-9108

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2N2970

TRANSISTOR

NSN, MFG P/N

5961009259108

NSN

5961-00-925-9108

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4527 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

JANTX2N2970A

TRANSISTOR

NSN, MFG P/N

5961009259108

NSN

5961-00-925-9108

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JANTX2N2970A

TRANSISTOR

NSN, MFG P/N

5961009259108

NSN

5961-00-925-9108

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4527 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

RELEASE4527

TRANSISTOR

NSN, MFG P/N

5961009259108

NSN

5961-00-925-9108

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RELEASE4527

TRANSISTOR

NSN, MFG P/N

5961009259108

NSN

5961-00-925-9108

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4527 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

034E41

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009259109

NSN

5961-00-925-9109

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034E41

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009259109

NSN

5961-00-925-9109

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N762-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009259109

NSN

5961-00-925-9109

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1N762-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009259109

NSN

5961-00-925-9109

MFG

N A P SMD TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

2N2137A

TRANSISTOR

NSN, MFG P/N

5961009259119

NSN

5961-00-925-9119

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2N2137A

TRANSISTOR

NSN, MFG P/N

5961009259119

NSN

5961-00-925-9119

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 62.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3574 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

1800813

TRANSISTOR

NSN, MFG P/N

5961009259121

NSN

5961-00-925-9121

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1800813

TRANSISTOR

NSN, MFG P/N

5961009259121

NSN

5961-00-925-9121

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC