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5961-00-929-2937
20 Products
VS148
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -67.0 TO 257.0 DEG FAHRENHEIT
OVERALL LENGTH: 0.437 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 10-32 THD STUD LOCATED ON END;INCLOSURE FEATURE:METAL CASE;LEAD TYPE:INDUCTIVE AND RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
10163885
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
10163885
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -67.0 TO 257.0 DEG FAHRENHEIT
OVERALL LENGTH: 0.437 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 10-32 THD STUD LOCATED ON END;INCLOSURE FEATURE:METAL CASE;LEAD TYPE:INDUCTIVE AND RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
401417
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
401417
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
MFG
TARGET CORPORATION DBA TARGET
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -67.0 TO 257.0 DEG FAHRENHEIT
OVERALL LENGTH: 0.437 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 10-32 THD STUD LOCATED ON END;INCLOSURE FEATURE:METAL CASE;LEAD TYPE:INDUCTIVE AND RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
7538016P001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
7538016P001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -67.0 TO 257.0 DEG FAHRENHEIT
OVERALL LENGTH: 0.437 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 10-32 THD STUD LOCATED ON END;INCLOSURE FEATURE:METAL CASE;LEAD TYPE:INDUCTIVE AND RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
B459157-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
B459157-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -67.0 TO 257.0 DEG FAHRENHEIT
OVERALL LENGTH: 0.437 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 10-32 THD STUD LOCATED ON END;INCLOSURE FEATURE:METAL CASE;LEAD TYPE:INDUCTIVE AND RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
KBPC102
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
KBPC102
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -67.0 TO 257.0 DEG FAHRENHEIT
OVERALL LENGTH: 0.437 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 10-32 THD STUD LOCATED ON END;INCLOSURE FEATURE:METAL CASE;LEAD TYPE:INDUCTIVE AND RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
KBPC102A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
KBPC102A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
MFG
ADELCO ELEKTRONIK GMBH
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -67.0 TO 257.0 DEG FAHRENHEIT
OVERALL LENGTH: 0.437 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 10-32 THD STUD LOCATED ON END;INCLOSURE FEATURE:METAL CASE;LEAD TYPE:INDUCTIVE AND RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
KBS02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009292937
NSN
5961-00-929-2937
MFG
GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -67.0 TO 257.0 DEG FAHRENHEIT
OVERALL LENGTH: 0.437 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 10-32 THD STUD LOCATED ON END;INCLOSURE FEATURE:METAL CASE;LEAD TYPE:INDUCTIVE AND RESISTIVE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
207037P2
TRANSISTOR
NSN, MFG P/N
5961009292967
NSN
5961-00-929-2967
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N3495
TRANSISTOR
NSN, MFG P/N
5961009292967
NSN
5961-00-929-2967
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
352250010232
TRANSISTOR
NSN, MFG P/N
5961009292967
NSN
5961-00-929-2967
MFG
THALES NEDERLAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
40-666-5233
TRANSISTOR
NSN, MFG P/N
5961009292967
NSN
5961-00-929-2967
MFG
MEGGITT UK LTD T/A VIBRO-METER UK
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
51-0214-001
TRANSISTOR
NSN, MFG P/N
5961009292967
NSN
5961-00-929-2967
MFG
NAVAL FACILITIES ENGINEERING COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SCBR2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009293055
NSN
5961-00-929-3055
SCBR2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009293055
NSN
5961-00-929-3055
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SPECIAL FEATURES: SILICON,SINGLE PHASE FULL WAVE BRIDGE;200V PEAK INVERSE VOLTAGE;140V RMS VOLTAGE;1.5 AMP AVERAGE RECTIFIED CURRENT AT 25 DEG C AND 1.05 AMP AT 100 DEG C;10 AMP RECURRENT SURGE CURRENT AT 25 DEG C;HERMETICALLY SEALED UNITS;MOLDED CASE;0.875 IN. DIA;0.250
~1: IN. H;4 SOLDER STUD TYPE TERMINALS 0.137 IN. MAX H;TERMINALS EQUALLY SPACED ON 0.625 IN. DIA CIRCLE;ONE 0.144 IN. DIA UNTHREADED MTG HOLE COUNTERBORED 0.310 IN. IN. DIA BY 0.125 IN. DEEP THROUGH CENTER OF CASE;M55.0 TO P150.0 DEG C OPERATING TEMP;STORAGE
~2: TEMP RANGE:MINUS 55.0 TO 150.0 DEG CELCIUS
Related Searches:
149-0178-01
TRANSISTOR
NSN, MFG P/N
5961009293143
NSN
5961-00-929-3143
MFG
CETEC BROADCAST GROUP DIV OF CETEC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4689 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 0.3 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N3371
TRANSISTOR
NSN, MFG P/N
5961009293143
NSN
5961-00-929-3143
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4689 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 0.3 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
CTP1150A
TRANSISTOR
NSN, MFG P/N
5961009293188
NSN
5961-00-929-3188
MFG
GOULD INC FOIL DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
UT215
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009293224
NSN
5961-00-929-3224
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1124A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009293757
NSN
5961-00-929-3757
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 3.30 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.019 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES MINIMUM AND 0.445 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2412460
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009293757
NSN
5961-00-929-3757
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 3.30 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.019 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES MINIMUM AND 0.445 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK