My Quote Request
5961-00-936-4054
20 Products
71SE125
TRANSISTOR
NSN, MFG P/N
5961009364054
NSN
5961-00-936-4054
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.520 INCHES MINIMUM AND 1.540 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.010 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
0N108088
TRANSISTOR
NSN, MFG P/N
5961009364055
NSN
5961-00-936-4055
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
1563074
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009365788
NSN
5961-00-936-5788
1563074
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009365788
NSN
5961-00-936-5788
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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2N2903
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009365788
NSN
5961-00-936-5788
2N2903
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009365788
NSN
5961-00-936-5788
MFG
TELCOM SEMICONDUCTOR INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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1N830
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009366044
NSN
5961-00-936-6044
MFG
FIBRE PRODUCTS DIVISION OF IKELHEIMER-ERNST INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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617952-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009366044
NSN
5961-00-936-6044
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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2068167-0701
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009366503
NSN
5961-00-936-6503
2068167-0701
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009366503
NSN
5961-00-936-6503
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
4JD12A8
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009366503
NSN
5961-00-936-6503
4JD12A8
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009366503
NSN
5961-00-936-6503
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
67-7468
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009366538
NSN
5961-00-936-6538
67-7468
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009366538
NSN
5961-00-936-6538
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
MATERIAL: SILICON
Related Searches:
MDA962-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009366555
NSN
5961-00-936-6555
MDA962-3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009366555
NSN
5961-00-936-6555
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.870 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
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1541517-1
TRANSISTOR
NSN, MFG P/N
5961009367353
NSN
5961-00-936-7353
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N4036
TRANSISTOR
NSN, MFG P/N
5961009367353
NSN
5961-00-936-7353
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
385087
TRANSISTOR
NSN, MFG P/N
5961009367353
NSN
5961-00-936-7353
MFG
CARL ZEISS OPTRONICS GMBH CARL ZEISS GRUPPE BETRIEBSSTAETTE WETZLAR
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
6L5512-012-008748
TRANSISTOR
NSN, MFG P/N
5961009367353
NSN
5961-00-936-7353
MFG
SELEX COMMUNICATIONS GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
LMZX22-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009367543
NSN
5961-00-936-7543
MFG
COMPONENTS INC SEMCOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
151-0120-01
TRANSISTOR
NSN, MFG P/N
5961009367586
NSN
5961-00-936-7586
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -2.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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34936
TRANSISTOR
NSN, MFG P/N
5961009367586
NSN
5961-00-936-7586
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -2.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
3N82
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009367588
NSN
5961-00-936-7588
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 159.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, DC AND 100.0 MAXIMUM REVERSE VOLTAGE, DC
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B77D0012
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009367588
NSN
5961-00-936-7588
B77D0012
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009367588
NSN
5961-00-936-7588
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS ELECTRONIC SYSTEMS CO
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 159.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, DC AND 100.0 MAXIMUM REVERSE VOLTAGE, DC
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014-856
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009367591
NSN
5961-00-936-7591
014-856
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009367591
NSN
5961-00-936-7591
MFG
AMPEX SYSTEMS CORP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
OVERALL DIAMETER: 0.335 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR PNP
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD