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5961-00-974-4351

20 Products

SZ11502

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009744351

NSN

5961-00-974-4351

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SZ11502

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009744351

NSN

5961-00-974-4351

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: SZ11502
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

723005-027

TRANSISTOR

NSN, MFG P/N

5961009732812

NSN

5961-00-973-2812

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723005-027

TRANSISTOR

NSN, MFG P/N

5961009732812

NSN

5961-00-973-2812

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 4JX1E696
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 03508
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N727

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009736254

NSN

5961-00-973-6254

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1N727

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009736254

NSN

5961-00-973-6254

MFG

N A P SMD TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

468169-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009736789

NSN

5961-00-973-6789

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468169-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009736789

NSN

5961-00-973-6789

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

DESIGN CONTROL REFERENCE: 468169-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. BG158C4
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

48-29583A01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009736943

NSN

5961-00-973-6943

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48-29583A01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009736943

NSN

5961-00-973-6943

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

479868-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009737848

NSN

5961-00-973-7848

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479868-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009737848

NSN

5961-00-973-7848

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.438 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH: 0.438 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

900299-5

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009737880

NSN

5961-00-973-7880

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900299-5

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009737880

NSN

5961-00-973-7880

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 89.5 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.310 INCHES NOMINAL
OVERALL LENGTH: 0.530 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

CA1963

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009737880

NSN

5961-00-973-7880

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CA1963

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009737880

NSN

5961-00-973-7880

MFG

MICROSEMI CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 89.5 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.310 INCHES NOMINAL
OVERALL LENGTH: 0.530 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD

RT5611

TRANSISTOR

NSN, MFG P/N

5961009737937

NSN

5961-00-973-7937

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RT5611

TRANSISTOR

NSN, MFG P/N

5961009737937

NSN

5961-00-973-7937

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

DESIGN CONTROL REFERENCE: SA1896
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SA1896

TRANSISTOR

NSN, MFG P/N

5961009737937

NSN

5961-00-973-7937

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SA1896

TRANSISTOR

NSN, MFG P/N

5961009737937

NSN

5961-00-973-7937

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: SA1896
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

900201-0196

TRANSISTOR

NSN, MFG P/N

5961009738279

NSN

5961-00-973-8279

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900201-0196

TRANSISTOR

NSN, MFG P/N

5961009738279

NSN

5961-00-973-8279

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. 629710
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SA2525

TRANSISTOR

NSN, MFG P/N

5961009738279

NSN

5961-00-973-8279

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SA2525

TRANSISTOR

NSN, MFG P/N

5961009738279

NSN

5961-00-973-8279

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. 629710
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SP8041

TRANSISTOR

NSN, MFG P/N

5961009738279

NSN

5961-00-973-8279

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SP8041

TRANSISTOR

NSN, MFG P/N

5961009738279

NSN

5961-00-973-8279

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. 629710
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SS70065

TRANSISTOR

NSN, MFG P/N

5961009738279

NSN

5961-00-973-8279

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SS70065

TRANSISTOR

NSN, MFG P/N

5961009738279

NSN

5961-00-973-8279

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. 629710
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

2N512A

TRANSISTOR

NSN, MFG P/N

5961009738701

NSN

5961-00-973-8701

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2N512A

TRANSISTOR

NSN, MFG P/N

5961009738701

NSN

5961-00-973-8701

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-2N512A PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 PIN

353-2034-00

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009743970

NSN

5961-00-974-3970

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353-2034-00

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009743970

NSN

5961-00-974-3970

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.203 INCHES MAXIMUM
OVERALL LENGTH: 0.528 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM ALL TRANSISTOR
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL TRANSISTOR

353-2034-000

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009743970

NSN

5961-00-974-3970

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353-2034-000

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009743970

NSN

5961-00-974-3970

MFG

COLE DIV OF LITTON BUSINESS SYSTEMS INC

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.203 INCHES MAXIMUM
OVERALL LENGTH: 0.528 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM ALL TRANSISTOR
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL TRANSISTOR

C50251

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009743970

NSN

5961-00-974-3970

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C50251

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009743970

NSN

5961-00-974-3970

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.203 INCHES MAXIMUM
OVERALL LENGTH: 0.528 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM ALL TRANSISTOR
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL TRANSISTOR

1493019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009743981

NSN

5961-00-974-3981

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1493019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009743981

NSN

5961-00-974-3981

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, PEAK

Z3720

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009743981

NSN

5961-00-974-3981

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Z3720

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009743981

NSN

5961-00-974-3981

MFG

N A P SMD TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, PEAK