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5961-00-997-2125
20 Products
SJ1259
TRANSISTOR
NSN, MFG P/N
5961009972125
NSN
5961-00-997-2125
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.687 INCHES NOMINAL
OVERALL LENGTH: 0.281 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 UNINSULATED WIRE LEAD
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70H10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009972147
NSN
5961-00-997-2147
MFG
VISHAY INTERTECHNOLOGY INC.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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720330
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009972147
NSN
5961-00-997-2147
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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B70H10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009972147
NSN
5961-00-997-2147
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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10101245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009972371
NSN
5961-00-997-2371
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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66D12345
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009972495
NSN
5961-00-997-2495
66D12345
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009972495
NSN
5961-00-997-2495
MFG
AIR ARMAMENT CENTER/ EN
Description
CURRENT RATING PER CHARACTERISTIC: 1200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.060 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM BREAKOVER VOLTAGE, DC
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C156B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009972495
NSN
5961-00-997-2495
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 1200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.060 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM BREAKOVER VOLTAGE, DC
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C156BX3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009972495
NSN
5961-00-997-2495
C156BX3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009972495
NSN
5961-00-997-2495
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 1200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.060 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM BREAKOVER VOLTAGE, DC
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200732-001
TRANSISTOR
NSN, MFG P/N
5961009972841
NSN
5961-00-997-2841
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
2N3227
TRANSISTOR
NSN, MFG P/N
5961009972841
NSN
5961-00-997-2841
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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401282-001
TRANSISTOR
NSN, MFG P/N
5961009972841
NSN
5961-00-997-2841
MFG
AIL SYSTEMS INC SUB OF EATON CORP
Description
TRANSISTOR
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910653
TRANSISTOR
NSN, MFG P/N
5961009972841
NSN
5961-00-997-2841
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
TRANSISTOR
Related Searches:
SM-A-679915
TRANSISTOR
NSN, MFG P/N
5961009972841
NSN
5961-00-997-2841
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
TRANSISTOR
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STSWT111-2N3227
TRANSISTOR
NSN, MFG P/N
5961009972841
NSN
5961-00-997-2841
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
TRANSISTOR
Related Searches:
00606296011074
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009972843
NSN
5961-00-997-2843
00606296011074
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009972843
NSN
5961-00-997-2843
MFG
THE TECHNICAL MATERIAL CORPORATION DBA T M C
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.062 INCHES NOMINAL
OVERALL LENGTH: 17.062 INCHES NOMINAL
OVERALL WIDTH: 3.891 INCHES NOMINAL
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320C018G09
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009972843
NSN
5961-00-997-2843
320C018G09
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009972843
NSN
5961-00-997-2843
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.062 INCHES NOMINAL
OVERALL LENGTH: 17.062 INCHES NOMINAL
OVERALL WIDTH: 3.891 INCHES NOMINAL
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00606296011067
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009972844
NSN
5961-00-997-2844
00606296011067
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009972844
NSN
5961-00-997-2844
MFG
THE TECHNICAL MATERIAL CORPORATION DBA T M C
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.062 INCHES NOMINAL
OVERALL LENGTH: 15.562 INCHES NOMINAL
OVERALL WIDTH: 3.891 INCHES NOMINAL
Related Searches:
320C018G10
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009972844
NSN
5961-00-997-2844
320C018G10
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009972844
NSN
5961-00-997-2844
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.062 INCHES NOMINAL
OVERALL LENGTH: 15.562 INCHES NOMINAL
OVERALL WIDTH: 3.891 INCHES NOMINAL
Related Searches:
118024-00
TRANSISTOR
NSN, MFG P/N
5961009974137
NSN
5961-00-997-4137
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
TRANSISTOR
Related Searches:
5SM558
TRANSISTOR
NSN, MFG P/N
5961009974137
NSN
5961-00-997-4137
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR