My Quote Request
5961-01-006-0188
20 Products
Q35-0004-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010060188
NSN
5961-01-006-0188
Q35-0004-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010060188
NSN
5961-01-006-0188
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
A16-004521
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010060188
NSN
5961-01-006-0188
A16-004521
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010060188
NSN
5961-01-006-0188
MFG
SONICRAFT INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
DN1328
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010060188
NSN
5961-01-006-0188
DN1328
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010060188
NSN
5961-01-006-0188
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
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12409
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010060189
NSN
5961-01-006-0189
12409
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010060189
NSN
5961-01-006-0189
MFG
GIGA-TRONICS INCORPORATED
Description
DESIGN CONTROL REFERENCE: 40-004647-01
MANUFACTURERS CODE: 30890
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
SPECIAL FEATURES: SILICON FULL-WAVE BRIDGE;EPOXY CASE;0.610 IN. TO 0.630 IN. MAX LG;0.463 IN. TO 0.498 IN. MAX W;0.245 IN. TO 0.255 IN. MAX H;4 WIRE LEAD TERMINALS;PEAK REVERSE VOLTAGE 100V;RMS VOLTAGE 70V;PEAK RECURRENT FORWARD CURRENT 50 AMP;PRECIOUS MATERIAL:SILVER;
~1: STORAGE TEMP RANGE:M65.0 TO P150.0 DEG CELCIUS
Related Searches:
40-004647-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010060189
NSN
5961-01-006-0189
40-004647-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010060189
NSN
5961-01-006-0189
MFG
INTERLINK COMMUNICATIONS INC
Description
DESIGN CONTROL REFERENCE: 40-004647-01
MANUFACTURERS CODE: 30890
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
SPECIAL FEATURES: SILICON FULL-WAVE BRIDGE;EPOXY CASE;0.610 IN. TO 0.630 IN. MAX LG;0.463 IN. TO 0.498 IN. MAX W;0.245 IN. TO 0.255 IN. MAX H;4 WIRE LEAD TERMINALS;PEAK REVERSE VOLTAGE 100V;RMS VOLTAGE 70V;PEAK RECURRENT FORWARD CURRENT 50 AMP;PRECIOUS MATERIAL:SILVER;
~1: STORAGE TEMP RANGE:M65.0 TO P150.0 DEG CELCIUS
Related Searches:
FWLD100
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010060189
NSN
5961-01-006-0189
FWLD100
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010060189
NSN
5961-01-006-0189
MFG
SEMICON COMPONENTS INC
Description
DESIGN CONTROL REFERENCE: 40-004647-01
MANUFACTURERS CODE: 30890
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
SPECIAL FEATURES: SILICON FULL-WAVE BRIDGE;EPOXY CASE;0.610 IN. TO 0.630 IN. MAX LG;0.463 IN. TO 0.498 IN. MAX W;0.245 IN. TO 0.255 IN. MAX H;4 WIRE LEAD TERMINALS;PEAK REVERSE VOLTAGE 100V;RMS VOLTAGE 70V;PEAK RECURRENT FORWARD CURRENT 50 AMP;PRECIOUS MATERIAL:SILVER;
~1: STORAGE TEMP RANGE:M65.0 TO P150.0 DEG CELCIUS
Related Searches:
TZ581
TRANSISTOR
NSN, MFG P/N
5961010060207
NSN
5961-01-006-0207
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
11165
TRANSISTOR
NSN, MFG P/N
5961010060208
NSN
5961-01-006-0208
MFG
EDO-AIRE
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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48NW9610A21
TRANSISTOR
NSN, MFG P/N
5961010060208
NSN
5961-01-006-0208
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
MPS6571
TRANSISTOR
NSN, MFG P/N
5961010060208
NSN
5961-01-006-0208
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N6375
TRANSISTOR
NSN, MFG P/N
5961010060210
NSN
5961-01-006-0210
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 580.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
801464-1
TRANSISTOR
NSN, MFG P/N
5961010060210
NSN
5961-01-006-0210
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 580.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
352-0704-050
TRANSISTOR
NSN, MFG P/N
5961010060212
NSN
5961-01-006-0212
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
84SP439
TRANSISTOR
NSN, MFG P/N
5961010060212
NSN
5961-01-006-0212
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
S39473
TRANSISTOR
NSN, MFG P/N
5961010060212
NSN
5961-01-006-0212
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
VE2002
TRANSISTOR
NSN, MFG P/N
5961010060212
NSN
5961-01-006-0212
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
1N4463
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010060214
NSN
5961-01-006-0214
MFG
HARRIS ACOUSTIC PRODUCTS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 174.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 0.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4463
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
2892251-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010060214
NSN
5961-01-006-0214
2892251-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010060214
NSN
5961-01-006-0214
MFG
PARAMAX SYSTEMS CORP COMMUNICATION SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 174.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 0.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4463
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JAN1N4463
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010060214
NSN
5961-01-006-0214
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 174.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 0.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4463
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
ZD8-2B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010060214
NSN
5961-01-006-0214
MFG
PLIOTRON COMPANY OF AMERICA LLC
Description
CURRENT RATING PER CHARACTERISTIC: 174.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 0.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4463
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0