My Quote Request
5961-01-011-4957
20 Products
JAN2N4416
TRANSISTOR
NSN, MFG P/N
5961010114957
NSN
5961-01-011-4957
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4416A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/428
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-C-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
2N4416A-2
TRANSISTOR
NSN, MFG P/N
5961010114957
NSN
5961-01-011-4957
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4416A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/428
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-C-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
352-0756-012
TRANSISTOR
NSN, MFG P/N
5961010114957
NSN
5961-01-011-4957
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4416A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/428
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-C-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
352-8011-240
TRANSISTOR
NSN, MFG P/N
5961010114957
NSN
5961-01-011-4957
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4416A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/428
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-C-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
419R559H01
TRANSISTOR
NSN, MFG P/N
5961010114957
NSN
5961-01-011-4957
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4416A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/428
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-C-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
4810-0000-001
TRANSISTOR
NSN, MFG P/N
5961010114957
NSN
5961-01-011-4957
MFG
AEROFLEX WICHITA INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4416A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/428
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-C-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
928209-2B
TRANSISTOR
NSN, MFG P/N
5961010114957
NSN
5961-01-011-4957
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4416A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/428
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-C-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
A500-58
TRANSISTOR
NSN, MFG P/N
5961010114957
NSN
5961-01-011-4957
MFG
C-COR ELECTRONICS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4416A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/428
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/428 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-C-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
1902-3043
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114958
NSN
5961-01-011-4958
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.32 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CD 35569
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114958
NSN
5961-01-011-4958
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.32 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ730818H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114958
NSN
5961-01-011-4958
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.32 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ730818M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114958
NSN
5961-01-011-4958
MFG
SIEMENS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.32 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ 10939-45
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114958
NSN
5961-01-011-4958
SZ 10939-45
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114958
NSN
5961-01-011-4958
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.32 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N409
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114959
NSN
5961-01-011-4959
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2500273-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114959
NSN
5961-01-011-4959
2500273-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114959
NSN
5961-01-011-4959
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SV4337
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114959
NSN
5961-01-011-4959
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ50904-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114959
NSN
5961-01-011-4959
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
TD333-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010114959
NSN
5961-01-011-4959
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
655-082-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010115192
NSN
5961-01-011-5192
655-082-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010115192
NSN
5961-01-011-5192
MFG
MICRO USPD INC
Description
SPECIAL FEATURES: CENTER TAP RECTIFIER;PEAK INVERSE VOLTAGE 100V;FORWARD CURRENT SURGE 15O AMP;OUTPUT CURRENT 15 AMP MAX;OPERATING TEMP M65 TO P150 DEG C;GLASS DIODES;EPOXY ENCAPSULATED WITH ALUMINUM FRAME;3 WIRE LOOP TYPE TERMINALS;2.260 IN. MAX LG;0.354 IN. MAX W;0.322
~1: IN. MAX H;TWO 0.175 IN. MAX DIA MTG HOLES 1.880 IN. CENTER TO CENTER;POSITIVE POLARITY;STORAGE TEMP RANGE:M65.0 TO P150.0 DEG CELCIUS
Related Searches:
7903528-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010115192
NSN
5961-01-011-5192
7903528-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010115192
NSN
5961-01-011-5192
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SPECIAL FEATURES: CENTER TAP RECTIFIER;PEAK INVERSE VOLTAGE 100V;FORWARD CURRENT SURGE 15O AMP;OUTPUT CURRENT 15 AMP MAX;OPERATING TEMP M65 TO P150 DEG C;GLASS DIODES;EPOXY ENCAPSULATED WITH ALUMINUM FRAME;3 WIRE LOOP TYPE TERMINALS;2.260 IN. MAX LG;0.354 IN. MAX W;0.322
~1: IN. MAX H;TWO 0.175 IN. MAX DIA MTG HOLES 1.880 IN. CENTER TO CENTER;POSITIVE POLARITY;STORAGE TEMP RANGE:M65.0 TO P150.0 DEG CELCIUS