My Quote Request
5961-01-018-2537
20 Products
CLM4120A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010182537
NSN
5961-01-018-2537
CLM4120A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010182537
NSN
5961-01-018-2537
MFG
CLAIREX ELECTRONICS DIV OF CLAIREX CORP
Description
OVERALL DIAMETER: 0.415 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
353-0221-180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010181484
NSN
5961-01-018-1484
353-0221-180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010181484
NSN
5961-01-018-1484
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: 21DEC00 ITEM REVIEWED UNDER GIRDER PROJECT. FG NON-CONCUR CANCELLATION ACTION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.239 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
44372 50315
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010181484
NSN
5961-01-018-1484
44372 50315
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010181484
NSN
5961-01-018-1484
MFG
THALES DEFENCE DEUTSCHLAND GMBH
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: 21DEC00 ITEM REVIEWED UNDER GIRDER PROJECT. FG NON-CONCUR CANCELLATION ACTION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.239 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
77069490
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010181484
NSN
5961-01-018-1484
MFG
ALCATEL - LUCENT FRANCE
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: 21DEC00 ITEM REVIEWED UNDER GIRDER PROJECT. FG NON-CONCUR CANCELLATION ACTION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.239 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
99095397
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010181484
NSN
5961-01-018-1484
MFG
THALES
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: 21DEC00 ITEM REVIEWED UNDER GIRDER PROJECT. FG NON-CONCUR CANCELLATION ACTION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.239 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
70HR60A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010181494
NSN
5961-01-018-1494
70HR60A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010181494
NSN
5961-01-018-1494
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.799 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 70 AMPS,600 VOLTS,REVERSE POLARITY
Related Searches:
845-706-3R
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010181494
NSN
5961-01-018-1494
845-706-3R
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010181494
NSN
5961-01-018-1494
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.799 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 70 AMPS,600 VOLTS,REVERSE POLARITY
Related Searches:
EV6-43AE00-0000
TRANSISTOR
NSN, MFG P/N
5961010181958
NSN
5961-01-018-1958
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 7.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.75 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC1426
TRANSISTOR
NSN, MFG P/N
5961010181959
NSN
5961-01-018-1959
MFG
NEC AMERICA INC
Description
TRANSISTOR
Related Searches:
ST-2054
TRANSISTOR
NSN, MFG P/N
5961010181959
NSN
5961-01-018-1959
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
TRANSISTOR
Related Searches:
2SC22
TRANSISTOR
NSN, MFG P/N
5961010181960
NSN
5961-01-018-1960
MFG
HYBRID SEMICONDUCTORS & ELECTRONICS INC DBA HYBRID SEMI CONDUCTORS & ELECTRO
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 13.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.136 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
A012-037
TRANSISTOR
NSN, MFG P/N
5961010181960
NSN
5961-01-018-1960
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 13.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.136 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC68
TRANSISTOR
NSN, MFG P/N
5961010181961
NSN
5961-01-018-1961
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2SC943
TRANSISTOR
NSN, MFG P/N
5961010181963
NSN
5961-01-018-1963
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2SC1442
TRANSISTOR
NSN, MFG P/N
5961010181964
NSN
5961-01-018-1964
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 1.300 INCHES MAXIMUM
OVERALL LENGTH: 0.589 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2SC30
TRANSISTOR
NSN, MFG P/N
5961010181969
NSN
5961-01-018-1969
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2SC32
TRANSISTOR
NSN, MFG P/N
5961010181971
NSN
5961-01-018-1971
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
194015
TRANSISTOR
NSN, MFG P/N
5961010181972
NSN
5961-01-018-1972
MFG
ROSEMOUNT ANALYTICAL INC
Description
DESIGN CONTROL REFERENCE: 194015
MANUFACTURERS CODE: 88177
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
SSTL-7878A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010182536
NSN
5961-01-018-2536
SSTL-7878A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010182536
NSN
5961-01-018-2536
MFG
EATON ELECTRICAL INC. DBA CUTTLER HMMER CMRCL CNTRLS DIV DIV VEHICLE CONTROLS BUSINESS UNIT
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
Related Searches:
65150-087
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010182537
NSN
5961-01-018-2537
65150-087
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010182537
NSN
5961-01-018-2537
MFG
DYNALEC CORPORATION
Description
OVERALL DIAMETER: 0.415 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD