My Quote Request
5961-01-023-9951
20 Products
STA9381
TRANSISTOR
NSN, MFG P/N
5961010239951
NSN
5961-01-023-9951
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
DESIGN CONTROL REFERENCE: 861606-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 13973
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
947304-4770
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
947304-4770
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4477
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
CD35856
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4477
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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CD35857
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
MFG
GEOTRONIC LABS INC DBA GEOTRONICS
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4477
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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DZ780203F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4477
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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DZ780203G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
MFG
SIEMENS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4477
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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FZ7310
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4477
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N4477
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
JANTX1N4477
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4477
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZ10939-332
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
SZ10939-332
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239463
NSN
5961-01-023-9463
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4477
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
2N4187
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010239464
NSN
5961-01-023-9464
2N4187
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010239464
NSN
5961-01-023-9464
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5221 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.320 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
353-6485-450
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010239464
NSN
5961-01-023-9464
353-6485-450
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010239464
NSN
5961-01-023-9464
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5221 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.320 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2534974
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010239920
NSN
5961-01-023-9920
2534974
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010239920
NSN
5961-01-023-9920
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
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C532REVA
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010239920
NSN
5961-01-023-9920
C532REVA
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010239920
NSN
5961-01-023-9920
MFG
SOLITRON DEVICES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
151-1055-00
TRANSISTOR
NSN, MFG P/N
5961010239948
NSN
5961-01-023-9948
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND
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3N201
TRANSISTOR
NSN, MFG P/N
5961010239948
NSN
5961-01-023-9948
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND
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4813-0000-001
TRANSISTOR
NSN, MFG P/N
5961010239948
NSN
5961-01-023-9948
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND
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62460
TRANSISTOR
NSN, MFG P/N
5961010239948
NSN
5961-01-023-9948
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND
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13-805789-1
TRANSISTOR
NSN, MFG P/N
5961010239950
NSN
5961-01-023-9950
MFG
GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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1743-0820
TRANSISTOR
NSN, MFG P/N
5961010239951
NSN
5961-01-023-9951
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
DESIGN CONTROL REFERENCE: 861606-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 13973
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
861606-1
TRANSISTOR
NSN, MFG P/N
5961010239951
NSN
5961-01-023-9951
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
DESIGN CONTROL REFERENCE: 861606-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 13973
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA: