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5961-01-025-1112

20 Products

NDP539

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251112

NSN

5961-01-025-1112

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NDP539

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251112

NSN

5961-01-025-1112

MFG

MICRO USPD INC

Description

DESIGN CONTROL REFERENCE: 152-0245-00
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 80009
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

MT7250

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251112

NSN

5961-01-025-1112

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MT7250

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251112

NSN

5961-01-025-1112

MFG

MICROSEMI CORPORATION

Description

DESIGN CONTROL REFERENCE: 152-0245-00
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 80009
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

A114E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251115

NSN

5961-01-025-1115

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A114E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251115

NSN

5961-01-025-1115

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: A114E
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.180 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK

SA4678

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010251473

NSN

5961-01-025-1473

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SA4678

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010251473

NSN

5961-01-025-1473

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

DESIGN CONTROL REFERENCE: SA4678
MANUFACTURERS CODE: SH879
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.344 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

19-004-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251476

NSN

5961-01-025-1476

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19-004-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251476

NSN

5961-01-025-1476

MFG

PALOMAR PRODUCTS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.290 MILLIMETERS NOMINAL
OVERALL LENGTH: 7.400 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N935

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251476

NSN

5961-01-025-1476

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1N935

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251476

NSN

5961-01-025-1476

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.290 MILLIMETERS NOMINAL
OVERALL LENGTH: 7.400 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1711380

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251483

NSN

5961-01-025-1483

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1711380

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251483

NSN

5961-01-025-1483

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES

Description

OVERALL DIAMETER: 0.104 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1711380-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251483

NSN

5961-01-025-1483

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1711380-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251483

NSN

5961-01-025-1483

MFG

L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION

Description

OVERALL DIAMETER: 0.104 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

JAN1N749R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251484

NSN

5961-01-025-1484

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JAN1N749R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010251484

NSN

5961-01-025-1484

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N749R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-127
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

655-475-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010252565

NSN

5961-01-025-2565

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655-475-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010252565

NSN

5961-01-025-2565

MFG

MICRO USPD INC

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 925418-1B
MANUFACTURERS CODE: 82577
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.406 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH: 1.125 INCHES MAXIMUM
THE MANUFACTURERS DATA:

925418-1B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010252565

NSN

5961-01-025-2565

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925418-1B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010252565

NSN

5961-01-025-2565

MFG

RAYTHEON COMPANY

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 925418-1B
MANUFACTURERS CODE: 82577
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.406 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH: 1.125 INCHES MAXIMUM
THE MANUFACTURERS DATA:

SA6192

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010252565

NSN

5961-01-025-2565

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SA6192

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010252565

NSN

5961-01-025-2565

MFG

SEMTECH CORPORATION

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 925418-1B
MANUFACTURERS CODE: 82577
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.406 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH: 1.125 INCHES MAXIMUM
THE MANUFACTURERS DATA:

SEN-B-364-1B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010252565

NSN

5961-01-025-2565

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SEN-B-364-1B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010252565

NSN

5961-01-025-2565

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 925418-1B
MANUFACTURERS CODE: 82577
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.406 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH: 1.125 INCHES MAXIMUM
THE MANUFACTURERS DATA:

151-0364-00

TRANSISTOR

NSN, MFG P/N

5961010252643

NSN

5961-01-025-2643

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151-0364-00

TRANSISTOR

NSN, MFG P/N

5961010252643

NSN

5961-01-025-2643

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

DESIGN CONTROL REFERENCE: X43C181
MANUFACTURERS CODE: 03508
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

X43C181

TRANSISTOR

NSN, MFG P/N

5961010252643

NSN

5961-01-025-2643

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X43C181

TRANSISTOR

NSN, MFG P/N

5961010252643

NSN

5961-01-025-2643

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

DESIGN CONTROL REFERENCE: X43C181
MANUFACTURERS CODE: 03508
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

938614

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010252649

NSN

5961-01-025-2649

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938614

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010252649

NSN

5961-01-025-2649

MFG

RACAL COMMUNICATIONS SYSTEMS LTD

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, PEAK

KV2201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010252649

NSN

5961-01-025-2649

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KV2201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010252649

NSN

5961-01-025-2649

MFG

KSW ELECTRONICS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, PEAK

1906-0023

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010253127

NSN

5961-01-025-3127

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1906-0023

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010253127

NSN

5961-01-025-3127

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN

CR208251

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010253127

NSN

5961-01-025-3127

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CR208251

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010253127

NSN

5961-01-025-3127

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN

MDA922-4

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010253127

NSN

5961-01-025-3127

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MDA922-4

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010253127

NSN

5961-01-025-3127

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN