My Quote Request
5961-01-029-3808
20 Products
2507545-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293808
NSN
5961-01-029-3808
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5169304
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010293435
NSN
5961-01-029-3435
5169304
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010293435
NSN
5961-01-029-3435
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.550 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH: 1.900 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 53711-5169304 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR
Related Searches:
72B286017-1001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010293435
NSN
5961-01-029-3435
72B286017-1001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010293435
NSN
5961-01-029-3435
MFG
BOEING COMPANY THE DBA BOEING
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.550 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH: 1.900 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 53711-5169304 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR
Related Searches:
GZ40218A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010293435
NSN
5961-01-029-3435
GZ40218A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010293435
NSN
5961-01-029-3435
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.550 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH: 1.900 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 53711-5169304 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR
Related Searches:
616AS234
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010293573
NSN
5961-01-029-3573
616AS234
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010293573
NSN
5961-01-029-3573
MFG
NAVAL AIR SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
2508778
TRANSISTOR
NSN, MFG P/N
5961010293795
NSN
5961-01-029-3795
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.141 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2508778 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM INTERBASE VOLTAGE
Related Searches:
X5BR1374
TRANSISTOR
NSN, MFG P/N
5961010293795
NSN
5961-01-029-3795
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.141 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2508778 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM INTERBASE VOLTAGE
Related Searches:
2064280
TRANSISTOR
NSN, MFG P/N
5961010293796
NSN
5961-01-029-3796
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
TRANSISTOR
Related Searches:
2500788
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010293800
NSN
5961-01-029-3800
2500788
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010293800
NSN
5961-01-029-3800
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MINIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 10001
MFR SOURCE CONTROLLING REFERENCE: 2500788
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.950 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM FORWARD VOLTAGE, DC
Related Searches:
SC24CDR115
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010293800
NSN
5961-01-029-3800
SC24CDR115
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010293800
NSN
5961-01-029-3800
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MINIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 10001
MFR SOURCE CONTROLLING REFERENCE: 2500788
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.950 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM FORWARD VOLTAGE, DC
Related Searches:
2508852-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293801
NSN
5961-01-029-3801
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
SS3073
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293801
NSN
5961-01-029-3801
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
UT858
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293801
NSN
5961-01-029-3801
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
2064199
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293803
NSN
5961-01-029-3803
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
TXV1N5551
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293803
NSN
5961-01-029-3803
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2507545-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293805
NSN
5961-01-029-3805
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2507545-3 10001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293805
NSN
5961-01-029-3805
2507545-3 10001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293805
NSN
5961-01-029-3805
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TX1N5306
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293805
NSN
5961-01-029-3805
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2507545-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293807
NSN
5961-01-029-3807
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 0.33 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM LIMITING VOLTAGE
Related Searches:
SCL108H1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010293807
NSN
5961-01-029-3807
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.33 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM LIMITING VOLTAGE