My Quote Request
5961-01-031-1010
20 Products
S5484-211
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010311010
NSN
5961-01-031-1010
MFG
HOBART CORPORATION DBA HOBART
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MJ4031
TRANSISTOR
NSN, MFG P/N
5961010309875
NSN
5961-01-030-9875
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.910 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SES43404
TRANSISTOR
NSN, MFG P/N
5961010309875
NSN
5961-01-030-9875
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.910 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
2N5085
TRANSISTOR
NSN, MFG P/N
5961010309876
NSN
5961-01-030-9876
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.318 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL HEIGHT: 0.410 INCHES MINIMUM AND 0.618 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
20-00708-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010309878
NSN
5961-01-030-9878
20-00708-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010309878
NSN
5961-01-030-9878
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00708-002
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.975 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
MA4P262
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010309878
NSN
5961-01-030-9878
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00708-002
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.975 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
UM7006E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010309878
NSN
5961-01-030-9878
MFG
MICRO USPD INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00708-002
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.975 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
B304649-09
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010310100
NSN
5961-01-031-0100
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA CPI DIV BEVERLY MICROWAVE DIVISION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
2001
TRANSISTOR
NSN, MFG P/N
5961010310133
NSN
5961-01-031-0133
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50155
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
A3241
TRANSISTOR
NSN, MFG P/N
5961010310133
NSN
5961-01-031-0133
MFG
AERONAUTICAL COMMUNICATIONS EQUIPMENT INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50155
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
A3238
TRANSISTOR
NSN, MFG P/N
5961010310134
NSN
5961-01-031-0134
MFG
AERONAUTICAL COMMUNICATIONS EQUIPMENT INC
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: DM100P
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: INSTRUMENT LANDING SYSTEM (ILS)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50155
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.355 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
CD2418
TRANSISTOR
NSN, MFG P/N
5961010310134
NSN
5961-01-031-0134
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: DM100P
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: INSTRUMENT LANDING SYSTEM (ILS)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50155
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.355 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
21008030-101
TRANSISTOR
NSN, MFG P/N
5961010310189
NSN
5961-01-031-0189
MFG
PERFECTING COUPLING CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
CM640R
TRANSISTOR
NSN, MFG P/N
5961010310189
NSN
5961-01-031-0189
MFG
CRYSTALONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
353-3692-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010310348
NSN
5961-01-031-0348
353-3692-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010310348
NSN
5961-01-031-0348
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DESIGN CONTROL REFERENCE: 353-3692-020
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13499
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
AL68742-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010310348
NSN
5961-01-031-0348
AL68742-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010310348
NSN
5961-01-031-0348
MFG
SIGNAL TECHNOLOGY CORPORATION DBA STC MICROWAVE SYSTEMS DIV SIGNAL TECHNOLOGY CORPORATION USE CAGE CODE 33025 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: 353-3692-020
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13499
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
GC40084
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010310348
NSN
5961-01-031-0348
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
DESIGN CONTROL REFERENCE: 353-3692-020
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13499
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
MA47714
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010310348
NSN
5961-01-031-0348
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
DESIGN CONTROL REFERENCE: 353-3692-020
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13499
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
FA02637E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010310710
NSN
5961-01-031-0710
FA02637E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010310710
NSN
5961-01-031-0710
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.456 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
SMB650914
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010310710
NSN
5961-01-031-0710
SMB650914
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010310710
NSN
5961-01-031-0710
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.456 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC ALL TRANSISTOR