My Quote Request
5961-01-038-2060
20 Products
MRTB12E09-515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382060
NSN
5961-01-038-2060
MRTB12E09-515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382060
NSN
5961-01-038-2060
MFG
AMPHENOL OPTIMIZE MANUFACTURING CO . DIV AMPHENOL AEROSPACE OPERATIONS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.170 INCHES NOMINAL
OVERALL WIDTH: 0.850 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ENCAPSULATED IN A MODULE BLOCK; 2 SEALING PLUGS INCLUDED
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.31 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
821-5530
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010381274
NSN
5961-01-038-1274
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5530B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N5530B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010381274
NSN
5961-01-038-1274
JANTX1N5530B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010381274
NSN
5961-01-038-1274
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5530B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MILS19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
019-005365-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010381930
NSN
5961-01-038-1930
019-005365-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010381930
NSN
5961-01-038-1930
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-005365-002
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALUMINUM HEAT SINK;2.260 IN. LG;0.334 IN. TO 0.354 IN. W;0.302 IN. TO 0.322 IN. H;PEAK INVERSE VOLTAGE 50 VOLTS;MAXIMUM FORWARD VOLTAGE DROP AT 10 AMPERAGE IS 95V
Related Searches:
804-2P
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010381930
NSN
5961-01-038-1930
804-2P
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010381930
NSN
5961-01-038-1930
MFG
MICRO USPD INC
Description
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-005365-002
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALUMINUM HEAT SINK;2.260 IN. LG;0.334 IN. TO 0.354 IN. W;0.302 IN. TO 0.322 IN. H;PEAK INVERSE VOLTAGE 50 VOLTS;MAXIMUM FORWARD VOLTAGE DROP AT 10 AMPERAGE IS 95V
Related Searches:
0N234255
TRANSISTOR
NSN, MFG P/N
5961010382053
NSN
5961-01-038-2053
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
MJ3041
TRANSISTOR
NSN, MFG P/N
5961010382053
NSN
5961-01-038-2053
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
2889269-1
TRANSISTOR
NSN, MFG P/N
5961010382054
NSN
5961-01-038-2054
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.278 INCHES NOMINAL
OVERALL LENGTH: 0.241 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
TEST DATA DOCUMENT: 10001-2889269 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
DMS 81016B
TRANSISTOR
NSN, MFG P/N
5961010382054
NSN
5961-01-038-2054
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.278 INCHES NOMINAL
OVERALL LENGTH: 0.241 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
TEST DATA DOCUMENT: 10001-2889269 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
PRT3636
TRANSISTOR
NSN, MFG P/N
5961010382054
NSN
5961-01-038-2054
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 425.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.278 INCHES NOMINAL
OVERALL LENGTH: 0.241 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 RIBBON
TEST DATA DOCUMENT: 10001-2889269 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
20-00760-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382057
NSN
5961-01-038-2057
20-00760-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382057
NSN
5961-01-038-2057
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: -4.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: -500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00724-20-00760 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
DJ1142
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382057
NSN
5961-01-038-2057
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: -4.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: -500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00724-20-00760 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
NDP-420
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382057
NSN
5961-01-038-2057
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: -4.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: -500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00724-20-00760 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
925958-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382058
NSN
5961-01-038-2058
925958-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382058
NSN
5961-01-038-2058
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.082 INCHES MINIMUM AND 0.094 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-925958 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A5X128J-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382058
NSN
5961-01-038-2058
A5X128J-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382058
NSN
5961-01-038-2058
MFG
FEI MICROWAVE INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.082 INCHES MINIMUM AND 0.094 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-925958 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GC40188-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382058
NSN
5961-01-038-2058
GC40188-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382058
NSN
5961-01-038-2058
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.082 INCHES MINIMUM AND 0.094 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-925958 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
10815-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382059
NSN
5961-01-038-2059
MFG
DRS TECHNOLOGIES CANADA COMPANY DBA DRS FLIGHT SAFETY & COMMUNICATIO NS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 36452-10815 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UZ7712L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382059
NSN
5961-01-038-2059
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 36452-10815 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
204-18583-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382060
NSN
5961-01-038-2060
204-18583-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382060
NSN
5961-01-038-2060
MFG
THE BOEING COMPANY DBA BOEING
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.170 INCHES NOMINAL
OVERALL WIDTH: 0.850 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ENCAPSULATED IN A MODULE BLOCK; 2 SEALING PLUGS INCLUDED
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.31 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
591800-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010382060
NSN
5961-01-038-2060
MFG
TYCO ELECTRONICS CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.170 INCHES NOMINAL
OVERALL WIDTH: 0.850 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ENCAPSULATED IN A MODULE BLOCK; 2 SEALING PLUGS INCLUDED
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.31 MAXIMUM NOMINAL REGULATOR VOLTAGE