My Quote Request
5961-01-046-9560
20 Products
85SH202
TRANSISTOR
NSN, MFG P/N
5961010469560
NSN
5961-01-046-9560
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.349 INCHES NOMINAL
OVERALL LENGTH: 0.394 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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1N3271
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010467265
NSN
5961-01-046-7265
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 160.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D09
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.443 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3660 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
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44A356469-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010467265
NSN
5961-01-046-7265
44A356469-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010467265
NSN
5961-01-046-7265
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 160.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D09
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.443 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3660 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
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MAN6630
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010468310
NSN
5961-01-046-8310
MAN6630
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010468310
NSN
5961-01-046-8310
MFG
GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 9 CENTER TAP 3 PHASE
DESIGN CONTROL REFERENCE: SPAV30323
MANUFACTURERS CODE: 3B150
MATERIAL: SILICON
OVERALL HEIGHT: 0.265 INCHES NOMINAL
OVERALL LENGTH: 0.985 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: MAX ABSOLUTE POWER RATING PER WATTS:650.0;TEMP IN DEG CELSIUS POWER RATING:25.0;INCLOSURE FEATURE:HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 18 PIN
THE MANUFACTURERS DATA:
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SPAV30323
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010468310
NSN
5961-01-046-8310
SPAV30323
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010468310
NSN
5961-01-046-8310
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 9 CENTER TAP 3 PHASE
DESIGN CONTROL REFERENCE: SPAV30323
MANUFACTURERS CODE: 3B150
MATERIAL: SILICON
OVERALL HEIGHT: 0.265 INCHES NOMINAL
OVERALL LENGTH: 0.985 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: MAX ABSOLUTE POWER RATING PER WATTS:650.0;TEMP IN DEG CELSIUS POWER RATING:25.0;INCLOSURE FEATURE:HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 18 PIN
THE MANUFACTURERS DATA:
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MDA922-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010468840
NSN
5961-01-046-8840
MDA922-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010468840
NSN
5961-01-046-8840
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 4.060 MILLIMETERS MINIMUM AND 4.700 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.100 MILLIMETERS MINIMUM AND 6.730 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.100 MILLIMETERS MINIMUM AND 6.730 MILLIMETERS MAXIMUM
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912553-801
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010469435
NSN
5961-01-046-9435
912553-801
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010469435
NSN
5961-01-046-9435
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: AN/AQA-7(V)4
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121698-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010469436
NSN
5961-01-046-9436
121698-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010469436
NSN
5961-01-046-9436
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
MAJOR COMPONENTS: PHOTO TRANSISTOR 2; HOLDER 1
SPECIAL FEATURES: BRIGHT SENSOR
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900AS2000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010469440
NSN
5961-01-046-9440
900AS2000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010469440
NSN
5961-01-046-9440
MFG
NAVAL AIR SYSTEMS COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
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MHQ6002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010469440
NSN
5961-01-046-9440
MHQ6002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010469440
NSN
5961-01-046-9440
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
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3209865
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010469441
NSN
5961-01-046-9441
3209865
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010469441
NSN
5961-01-046-9441
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 27.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.370 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.245 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
OVERALL WIDTH: 1.245 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
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MDA990-5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010469441
NSN
5961-01-046-9441
MDA990-5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010469441
NSN
5961-01-046-9441
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 27.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.370 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.245 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
OVERALL WIDTH: 1.245 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
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505-119
TRANSISTOR
NSN, MFG P/N
5961010469555
NSN
5961-01-046-9555
MFG
PLATH GMBH
Description
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE
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BF244B
TRANSISTOR
NSN, MFG P/N
5961010469555
NSN
5961-01-046-9555
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE
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151-0368-01
TRANSISTOR
NSN, MFG P/N
5961010469557
NSN
5961-01-046-9557
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
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3522 500 24739
TRANSISTOR
NSN, MFG P/N
5961010469558
NSN
5961-01-046-9558
MFG
THALES NEDERLAND
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N5660
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/454
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/454 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JAN2N5660
TRANSISTOR
NSN, MFG P/N
5961010469558
NSN
5961-01-046-9558
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N5660
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/454
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/454 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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Q05660F
TRANSISTOR
NSN, MFG P/N
5961010469558
NSN
5961-01-046-9558
MFG
SCIENTIFIC RADIO SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N5660
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/454
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/454 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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2N4233A
TRANSISTOR
NSN, MFG P/N
5961010469559
NSN
5961-01-046-9559
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6357 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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14480-003
TRANSISTOR
NSN, MFG P/N
5961010469560
NSN
5961-01-046-9560
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.349 INCHES NOMINAL
OVERALL LENGTH: 0.394 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN