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5961-01-051-8616

20 Products

STI-424

TRANSISTOR

NSN, MFG P/N

5961010518616

NSN

5961-01-051-8616

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STI-424

TRANSISTOR

NSN, MFG P/N

5961010518616

NSN

5961-01-051-8616

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6308
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/498
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 350.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SJ1945

TRANSISTOR

NSN, MFG P/N

5961010518616

NSN

5961-01-051-8616

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SJ1945

TRANSISTOR

NSN, MFG P/N

5961010518616

NSN

5961-01-051-8616

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6308
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/498
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 350.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

1N4721

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518617

NSN

5961-01-051-8617

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1N4721

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518617

NSN

5961-01-051-8617

MFG

KALMAR AC INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

972116-0003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518618

NSN

5961-01-051-8618

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972116-0003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518618

NSN

5961-01-051-8618

MFG

TEXAS INSTRUMENTS INC INFORMATION TECHNOLOGY GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

UTG1250

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518618

NSN

5961-01-051-8618

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UTG1250

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518618

NSN

5961-01-051-8618

MFG

MICRO USPD INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

UZ7808V

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518619

NSN

5961-01-051-8619

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UZ7808V

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518619

NSN

5961-01-051-8619

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL DIAMETER: 0.187 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE

1DTDS1047

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518621

NSN

5961-01-051-8621

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1DTDS1047

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518621

NSN

5961-01-051-8621

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, PEAK

4181477

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518622

NSN

5961-01-051-8622

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4181477

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518622

NSN

5961-01-051-8622

MFG

ROHDE & SCHWARZ GMBH & CO. KG

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

57110-0034-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518622

NSN

5961-01-051-8622

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57110-0034-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518622

NSN

5961-01-051-8622

MFG

CONCURRENT COMPUTER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

A114A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518622

NSN

5961-01-051-8622

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A114A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518622

NSN

5961-01-051-8622

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

Q62702-Y221-F8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518622

NSN

5961-01-051-8622

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Q62702-Y221-F8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010518622

NSN

5961-01-051-8622

MFG

EPCOS AG

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

55-0830-3

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

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55-0830-3

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

MFG

GRIMES AEROSPACE COMPANY DBA HONEYWELL

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.470 INCHES MINIMUM AND 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.540 INCHES MINIMUM AND 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 72914-55-0830 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK GATE VOLTAGE

C137NX179

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

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C137NX179

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.470 INCHES MINIMUM AND 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.540 INCHES MINIMUM AND 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 72914-55-0830 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK GATE VOLTAGE

SCR-1914

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

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SCR-1914

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.470 INCHES MINIMUM AND 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.540 INCHES MINIMUM AND 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 72914-55-0830 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK GATE VOLTAGE

SES710

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

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SES710

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

MFG

SEMITRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.470 INCHES MINIMUM AND 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.540 INCHES MINIMUM AND 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 72914-55-0830 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK GATE VOLTAGE

T40008220800

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

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T40008220800

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010518624

NSN

5961-01-051-8624

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.470 INCHES MINIMUM AND 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.540 INCHES MINIMUM AND 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 72914-55-0830 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK GATE VOLTAGE

11336-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010519292

NSN

5961-01-051-9292

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11336-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010519292

NSN

5961-01-051-9292

MFG

DRS TECHNOLOGIES CANADA COMPANY DBA DRS FLIGHT SAFETY & COMMUNICATIO NS

Description

COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR NPN
TERMINAL TYPE AND QUANTITY: 14 PIN

3064732-02BCC

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010519292

NSN

5961-01-051-9292

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3064732-02BCC

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010519292

NSN

5961-01-051-9292

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR NPN
TERMINAL TYPE AND QUANTITY: 14 PIN

CA3045D3

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010519292

NSN

5961-01-051-9292

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CA3045D3

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010519292

NSN

5961-01-051-9292

MFG

INTERSIL CORPORATION

Description

COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR NPN
TERMINAL TYPE AND QUANTITY: 14 PIN

CA3045D3A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010519292

NSN

5961-01-051-9292

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CA3045D3A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010519292

NSN

5961-01-051-9292

MFG

ADELCO ELEKTRONIK GMBH

Description

COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION TRANSISTOR NPN
TERMINAL TYPE AND QUANTITY: 14 PIN