My Quote Request
5961-01-060-9656
20 Products
4R8S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010609656
NSN
5961-01-060-9656
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 1000.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 97942-142C923 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 30.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
2N4036
TRANSISTOR
NSN, MFG P/N
5961010605408
NSN
5961-01-060-5408
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 80009
MFR SOURCE CONTROLLING REFERENCE: 151-0208-02
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG
Related Searches:
537528-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010605653
NSN
5961-01-060-5653
537528-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010605653
NSN
5961-01-060-5653
MFG
RAYTHEON COMPANY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 537528-6
III END ITEM IDENTIFICATION: ATTACK AIRCRAFT A-7E (PECULIAR)
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.100 INCHES NOMINAL
SPECIAL FEATURES: 25AMP; 5 TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
655-479-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010605653
NSN
5961-01-060-5653
655-479-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010605653
NSN
5961-01-060-5653
MFG
MICRO USPD INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 537528-6
III END ITEM IDENTIFICATION: ATTACK AIRCRAFT A-7E (PECULIAR)
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.100 INCHES NOMINAL
SPECIAL FEATURES: 25AMP; 5 TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
SA6251
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010605653
NSN
5961-01-060-5653
SA6251
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010605653
NSN
5961-01-060-5653
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 537528-6
III END ITEM IDENTIFICATION: ATTACK AIRCRAFT A-7E (PECULIAR)
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.100 INCHES NOMINAL
SPECIAL FEATURES: 25AMP; 5 TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
589R131H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010606663
NSN
5961-01-060-6663
589R131H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010606663
NSN
5961-01-060-6663
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL HOLDING CURRENT, DC
DESIGN CONTROL REFERENCE: 589R131H01
III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR (ASR-9); NEXT GENERATION RADAR (NEXRAD)
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.520 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NSN RESTRICTED TO USE BY NWS DEPOT TEAM ONLY
TERMINAL TYPE AND QUANTITY: 2 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 NOMINAL ON-STATE VOLTAGE, DC
Related Searches:
638-605
TRANSISTOR
NSN, MFG P/N
5961010607299
NSN
5961-01-060-7299
MFG
RS COMPONENTS LIMITED
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
DESIGN CONTROL REFERENCE: TIP112
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MANUFACTURERS CODE: 1MQ07
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
TIP112
TRANSISTOR
NSN, MFG P/N
5961010607299
NSN
5961-01-060-7299
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
DESIGN CONTROL REFERENCE: TIP112
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MANUFACTURERS CODE: 1MQ07
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
SJE700
TRANSISTOR
NSN, MFG P/N
5961010607888
NSN
5961-01-060-7888
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
HAB080
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010607889
NSN
5961-01-060-7889
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CATHODE BAND
TERMINAL LENGTH: 1.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SC3BA05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010608004
NSN
5961-01-060-8004
SC3BA05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010608004
NSN
5961-01-060-8004
MFG
SEMTECH CORPORATION
Description
SPECIAL FEATURES: SILICON;FAST RECOVERY;3-PHASE BRIDGE;ALUMINUM CASE;PIV 50 TO 600 VOLTS;UNIVERSAL 3-WAY TERMINALS;20 AMPS AVERAGE OUTPUT;2.250 IN. LG O/A;TWO SIZE 0.169 IN. DIA MTG HOLES;INSULATED ELECTRICAL CONNECTIONS
Related Searches:
SC3BA05M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010608004
NSN
5961-01-060-8004
SC3BA05M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010608004
NSN
5961-01-060-8004
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SPECIAL FEATURES: SILICON;FAST RECOVERY;3-PHASE BRIDGE;ALUMINUM CASE;PIV 50 TO 600 VOLTS;UNIVERSAL 3-WAY TERMINALS;20 AMPS AVERAGE OUTPUT;2.250 IN. LG O/A;TWO SIZE 0.169 IN. DIA MTG HOLES;INSULATED ELECTRICAL CONNECTIONS
Related Searches:
581R502H10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010608687
NSN
5961-01-060-8687
581R502H10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010608687
NSN
5961-01-060-8687
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANM19500/483-01
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/483
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.280 INCHES MAXIMUM
OVERALL WIDTH: 0.730 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/483 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
JANM19500/483-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010608687
NSN
5961-01-060-8687
JANM19500/483-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010608687
NSN
5961-01-060-8687
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANM19500/483-01
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/483
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.280 INCHES MAXIMUM
OVERALL WIDTH: 0.730 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/483 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
STR435
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010609152
NSN
5961-01-060-9152
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
DESIGN CONTROL REFERENCE: STR435
INCLOSURE MATERIAL: METAL AND GLASS
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.094 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
5800583-926210-125
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010609206
NSN
5961-01-060-9206
5800583-926210-125
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010609206
NSN
5961-01-060-9206
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
SPECIAL FEATURES: THREE PHASE BRIDGE;ALUMINUM CASE;WIRE LOOP TERMINALS;600 V;15.0 A
Related Searches:
696-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010609206
NSN
5961-01-060-9206
696-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010609206
NSN
5961-01-060-9206
MFG
MICRO USPD INC
Description
SPECIAL FEATURES: THREE PHASE BRIDGE;ALUMINUM CASE;WIRE LOOP TERMINALS;600 V;15.0 A
Related Searches:
11512970
TRANSISTOR
NSN, MFG P/N
5961010609654
NSN
5961-01-060-9654
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 11512970
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 18876
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
MIS-19628-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010609655
NSN
5961-01-060-9655
MIS-19628-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010609655
NSN
5961-01-060-9655
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS-19628-1
MANUFACTURERS CODE: 18876
OVERALL HEIGHT: 0.320 INCHES MINIMUM AND 0.468 INCHES MAXIMUM
OVERALL WIDTH: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
THE MANUFACTURERS DATA:
Related Searches:
142C923H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010609656
NSN
5961-01-060-9656
142C923H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010609656
NSN
5961-01-060-9656
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 1000.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.438 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 97942-142C923 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 30.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS