My Quote Request
5961-01-062-2594
20 Products
L02165
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010622594
NSN
5961-01-062-2594
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4153-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/337
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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19B226282G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010622595
NSN
5961-01-062-2595
19B226282G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010622595
NSN
5961-01-062-2595
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
Related Searches:
755017A4315
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010623070
NSN
5961-01-062-3070
755017A4315
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010623070
NSN
5961-01-062-3070
MFG
MARINE CORPS
Description
DESIGN CONTROL REFERENCE: 755017A4315
III END ITEM IDENTIFICATION: 5820-01-067-8359 RADIO SET AN/GRC-193
MANUFACTURERS CODE: 80372
THE MANUFACTURERS DATA:
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SA6615
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010623070
NSN
5961-01-062-3070
SA6615
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010623070
NSN
5961-01-062-3070
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
DESIGN CONTROL REFERENCE: 755017A4315
III END ITEM IDENTIFICATION: 5820-01-067-8359 RADIO SET AN/GRC-193
MANUFACTURERS CODE: 80372
THE MANUFACTURERS DATA:
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19A134060P1
TRANSISTOR
NSN, MFG P/N
5961010623483
NSN
5961-01-062-3483
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER OUTPUT 2.8 WATTS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 08771-19A134060 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -36.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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19A134060P2
TRANSISTOR
NSN, MFG P/N
5961010623484
NSN
5961-01-062-3484
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER OUTPUT 17 WATTS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 08771-19A134060 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -36.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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19A134060P3
TRANSISTOR
NSN, MFG P/N
5961010623485
NSN
5961-01-062-3485
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER OUTPUT 40 WATTS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 08771-19A134060 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -36.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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SES294
TRANSISTOR
NSN, MFG P/N
5961010623485
NSN
5961-01-062-3485
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER OUTPUT 40 WATTS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 08771-19A134060 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -36.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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70HGR100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623488
NSN
5961-01-062-3488
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D05
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REVERSE POLARITY UNIT
TERMINAL LENGTH: 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
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19A116052P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623489
NSN
5961-01-062-3489
19A116052P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623489
NSN
5961-01-062-3489
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08771-19A116052 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-2811
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623489
NSN
5961-01-062-3489
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08771-19A116052 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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19A116052P5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623490
NSN
5961-01-062-3490
19A116052P5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623490
NSN
5961-01-062-3490
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08771-19A116052 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -2.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-2811
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623490
NSN
5961-01-062-3490
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08771-19A116052 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -2.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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19B219800G3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623491
NSN
5961-01-062-3491
19B219800G3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010623491
NSN
5961-01-062-3491
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.405 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEADS MUST BE HEAT SUNK SOLDERED; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 3.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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231031-000
TRANSISTOR
NSN, MFG P/N
5961010623820
NSN
5961-01-062-3820
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 231031-000
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81413
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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852415-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010624435
NSN
5961-01-062-4435
852415-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010624435
NSN
5961-01-062-4435
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
2595559
TRANSISTOR
NSN, MFG P/N
5961010624526
NSN
5961-01-062-4526
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2595559
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 10001
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.141 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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2595558
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010624668
NSN
5961-01-062-4668
2595558
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010624668
NSN
5961-01-062-4668
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.740 INCHES NOMINAL
OVERALL LENGTH: 2.632 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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655-636
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010624668
NSN
5961-01-062-4668
655-636
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010624668
NSN
5961-01-062-4668
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.740 INCHES NOMINAL
OVERALL LENGTH: 2.632 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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TRANSISTOR
NSN, MFG P/N
5961010624965
NSN
5961-01-062-4965
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR MATERIAL: SILICON