My Quote Request
5961-01-065-9376
20 Products
SES532
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010659376
NSN
5961-01-065-9376
SES532
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010659376
NSN
5961-01-065-9376
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 720.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX2N690
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010659376
NSN
5961-01-065-9376
JANTX2N690
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010659376
NSN
5961-01-065-9376
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 720.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
101000168
TRANSISTOR
NSN, MFG P/N
5961010659808
NSN
5961-01-065-9808
MFG
DATA GENERAL CORP M/S 9S17
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.568 INCHES MINIMUM AND 0.615 INCHES MAXIMUM
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
D45H4
TRANSISTOR
NSN, MFG P/N
5961010659808
NSN
5961-01-065-9808
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.568 INCHES MINIMUM AND 0.615 INCHES MAXIMUM
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
581-149
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010659809
NSN
5961-01-065-9809
MFG
DOA INC
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
680-800922-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010659809
NSN
5961-01-065-9809
680-800922-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010659809
NSN
5961-01-065-9809
MFG
MODCOMP INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
10676180
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010660422
NSN
5961-01-066-0422
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DESIGN CONTROL REFERENCE: 10676180
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL TRANSISTOR
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
TEST DATA DOCUMENT: 18876-10676180 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
2N1717
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010660422
NSN
5961-01-066-0422
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DESIGN CONTROL REFERENCE: 10676180
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL TRANSISTOR
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
TEST DATA DOCUMENT: 18876-10676180 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
UZ9646
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010660702
NSN
5961-01-066-0702
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CR1304F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010660703
NSN
5961-01-066-0703
MFG
SCIENTIFIC RADIO SYSTEMS INC
Description
DESIGN CONTROL REFERENCE: UES1304
III END ITEM IDENTIFICATION: SR115
MANUFACTURERS CODE: 12969
THE MANUFACTURERS DATA:
Related Searches:
UES1304
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010660703
NSN
5961-01-066-0703
MFG
MICRO USPD INC
Description
DESIGN CONTROL REFERENCE: UES1304
III END ITEM IDENTIFICATION: SR115
MANUFACTURERS CODE: 12969
THE MANUFACTURERS DATA:
Related Searches:
2N5933
TRANSISTOR
NSN, MFG P/N
5961010660962
NSN
5961-01-066-0962
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3VARIATION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
581-094
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010660964
NSN
5961-01-066-0964
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
680-800923-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010660964
NSN
5961-01-066-0964
680-800923-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010660964
NSN
5961-01-066-0964
MFG
MODCOMP INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
680-800125-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010660965
NSN
5961-01-066-0965
680-800125-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010660965
NSN
5961-01-066-0965
MFG
MODCOMP INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
985213-201
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010661584
NSN
5961-01-066-1584
985213-201
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010661584
NSN
5961-01-066-1584
MFG
TITAN CORP THE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.375 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
SPECIAL FEATURES: DIODE ARRAY SEALED FLAT PACK; COMMON-CATHODE,COMMON ANODE
Related Searches:
BC1091
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010661584
NSN
5961-01-066-1584
BC1091
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010661584
NSN
5961-01-066-1584
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.375 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
SPECIAL FEATURES: DIODE ARRAY SEALED FLAT PACK; COMMON-CATHODE,COMMON ANODE
Related Searches:
FSA2508M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010661584
NSN
5961-01-066-1584
FSA2508M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010661584
NSN
5961-01-066-1584
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL LENGTH: 0.375 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
SPECIAL FEATURES: DIODE ARRAY SEALED FLAT PACK; COMMON-CATHODE,COMMON ANODE
Related Searches:
168690
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010661831
NSN
5961-01-066-1831
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 8.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
7701-22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010661831
NSN
5961-01-066-1831
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 8.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22000.0 MAXIMUM REVERSE VOLTAGE, PEAK