My Quote Request
5961-01-073-0679
20 Products
76387A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010730679
NSN
5961-01-073-0679
76387A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010730679
NSN
5961-01-073-0679
MFG
MICROSEMI CORP-COLORADO
Description
III END ITEM IDENTIFICATION: SYNTRON CONTROLLER C-3
MATERIAL: SILICON
SPECIAL FEATURES: 60 CYCLES;RMS INPUT VOLTAGE RATING:550.0
Related Searches:
013-883
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729458
NSN
5961-01-072-9458
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
013-827
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729459
NSN
5961-01-072-9459
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
581-071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729460
NSN
5961-01-072-9460
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
581-079
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729461
NSN
5961-01-072-9461
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
013-750
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729462
NSN
5961-01-072-9462
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
013-663
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729463
NSN
5961-01-072-9463
MFG
AMPEX DATA SYSTEMS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
581-073
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729464
NSN
5961-01-072-9464
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
Z1162
TRANSISTOR
NSN, MFG P/N
5961010729572
NSN
5961-01-072-9572
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1162
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
PN3564
TRANSISTOR
NSN, MFG P/N
5961010729573
NSN
5961-01-072-9573
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
10182354-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729574
NSN
5961-01-072-9574
10182354-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729574
NSN
5961-01-072-9574
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10182354-002
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
Z1011
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961010729604
NSN
5961-01-072-9604
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1011
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
D22-0007-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729781
NSN
5961-01-072-9781
D22-0007-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729781
NSN
5961-01-072-9781
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.4 GRAMS
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED AND 20.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
MR811
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010729781
NSN
5961-01-072-9781
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.4 GRAMS
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED AND 20.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
70-10918-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010729803
NSN
5961-01-072-9803
70-10918-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010729803
NSN
5961-01-072-9803
MFG
COMPAQ FEDERAL LLC
Description
MAJOR COMPONENTS: DIODE 4
OVERALL LENGTH: 0.400 INCHES NOMINAL
SPECIAL FEATURES: STICK ASSEMBLY
Related Searches:
70-10918-00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010729804
NSN
5961-01-072-9804
70-10918-00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010729804
NSN
5961-01-072-9804
MFG
COMPAQ FEDERAL LLC
Description
MAJOR COMPONENTS: DIODE 4
OVERALL LENGTH: 0.400 INCHES NOMINAL
SPECIAL FEATURES: STICK ASSEMBLY
Related Searches:
70-10918-02
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010729805
NSN
5961-01-072-9805
70-10918-02
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010729805
NSN
5961-01-072-9805
MFG
COMPAQ FEDERAL LLC
Description
MAJOR COMPONENTS: DIODE 8
OVERALL LENGTH: 0.800 INCHES NOMINAL
SPECIAL FEATURES: STICK ASSEMBLY
Related Searches:
70-10918-03
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010729806
NSN
5961-01-072-9806
70-10918-03
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010729806
NSN
5961-01-072-9806
MFG
COMPAQ FEDERAL LLC
Description
MAJOR COMPONENTS: DIODE 8
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.100 INCHES NOMINAL
SPECIAL FEATURES: STICK ASSEMBLY
Related Searches:
801446-1
TRANSISTOR
NSN, MFG P/N
5961010730278
NSN
5961-01-073-0278
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: JANTX2N5684
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.193 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM
TERMINAL LENGTH: 0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTX2N5684
TRANSISTOR
NSN, MFG P/N
5961010730278
NSN
5961-01-073-0278
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: JANTX2N5684
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.193 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM
TERMINAL LENGTH: 0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN