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5961-01-078-1014
20 Products
BSSD1019-5
TRANSISTOR
NSN, MFG P/N
5961010781014
NSN
5961-01-078-1014
MFG
BRITISH SAROZAL LTD
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 404120-6
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 57962
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
932174-1
TRANSISTOR
NSN, MFG P/N
5961010781513
NSN
5961-01-078-1513
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
TRANSISTOR
Related Searches:
932160-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010781514
NSN
5961-01-078-1514
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N752C-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500/127 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
JAN1N752C-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010781514
NSN
5961-01-078-1514
JAN1N752C-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010781514
NSN
5961-01-078-1514
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N752C-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500/127 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
430605
TRANSISTOR
NSN, MFG P/N
5961010781667
NSN
5961-01-078-1667
MFG
TELEMECHANICS INC
Description
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
48-1014-05
TRANSISTOR
NSN, MFG P/N
5961010781668
NSN
5961-01-078-1668
MFG
ANALOGIC CORP DATA PRECISION DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 20.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.150 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: MINIMUM PEAK-POINT VOLTAGE 0 V
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 4.0 MAXIMUM PEAK-POINT VOLTAGE AND 20.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
Related Searches:
346394
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010781671
NSN
5961-01-078-1671
MFG
TELEMECHANICS INC
Description
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
IN4730A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010781671
NSN
5961-01-078-1671
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
401060
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010781672
NSN
5961-01-078-1672
MFG
TELEMECHANICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A28F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010781672
NSN
5961-01-078-1672
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
35-447
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010781674
NSN
5961-01-078-1674
35-447
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010781674
NSN
5961-01-078-1674
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
78-5298
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010781674
NSN
5961-01-078-1674
78-5298
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010781674
NSN
5961-01-078-1674
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
NL35-447
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010781674
NSN
5961-01-078-1674
NL35-447
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010781674
NSN
5961-01-078-1674
MFG
NATIONAL ELECTRONICS DIV OF RICHARDSON ELECTRONICS LTD
Description
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
3N187
TRANSISTOR
NSN, MFG P/N
5961010782243
NSN
5961-01-078-2243
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
841001-1
TRANSISTOR
NSN, MFG P/N
5961010782243
NSN
5961-01-078-2243
MFG
DRS SIGNAL SOLUTIONS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
1150MAMPAC
TRANSISTOR
NSN, MFG P/N
5961010782467
NSN
5961-01-078-2467
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
DESIGN CONTROL REFERENCE: 1150MAMPAC
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT (DME)
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
403499-3
TRANSISTOR
NSN, MFG P/N
5961010782467
NSN
5961-01-078-2467
MFG
TARGET CORPORATION DBA TARGET
Description
DESIGN CONTROL REFERENCE: 1150MAMPAC
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT (DME)
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
151-0432-00
TRANSISTOR
NSN, MFG P/N
5961010783606
NSN
5961-01-078-3606
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
89300411
TRANSISTOR
NSN, MFG P/N
5961010783606
NSN
5961-01-078-3606
MFG
THALES AIR DEFENCE
Description
TRANSISTOR
Related Searches:
ST07391
TRANSISTOR
NSN, MFG P/N
5961010783606
NSN
5961-01-078-3606
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR