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5961-01-082-4378
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MAT-01GH
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010824378
NSN
5961-01-082-4378
MAT-01GH
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010824378
NSN
5961-01-082-4378
MFG
ANALOG DEVICES INC. DIV SANTA CLARA SITE
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN, FORRESTAL CLASS CV, OLIVER PERRY CLASS FFG, ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963), TICONDEROGA CLASS CG (47), LANDING CRAFT AIR CUSHION (LCAC); SUPPORT EQUIPMENT, B-52 AIRCRAFT; ENGINE, AIRCRAFT TF33-PW-102 (C-135E,
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
~1: EC-135H/K/P)
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010821997
NSN
5961-01-082-1997
SZ10939-20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010821997
NSN
5961-01-082-1997
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010822019
NSN
5961-01-082-2019
1810-0326
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010822019
NSN
5961-01-082-2019
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
INCLOSURE MATERIAL: METAL
TERMINAL TYPE AND QUANTITY: 10 PIN
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010822019
NSN
5961-01-082-2019
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010822019
NSN
5961-01-082-2019
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
INCLOSURE MATERIAL: METAL
TERMINAL TYPE AND QUANTITY: 10 PIN
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08558-20095
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010822020
NSN
5961-01-082-2020
08558-20095
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010822020
NSN
5961-01-082-2020
MFG
HEWLETT PACKARD CO
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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08558-60152
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010822020
NSN
5961-01-082-2020
08558-60152
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010822020
NSN
5961-01-082-2020
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT SOLUTION SUPPORT
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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BD239A
TRANSISTOR
NSN, MFG P/N
5961010822843
NSN
5961-01-082-2843
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.606 INCHES MINIMUM AND 0.675 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.540 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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TRANSISTOR
NSN, MFG P/N
5961010823218
NSN
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MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961010823405
NSN
5961-01-082-3405
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
DESIGN CONTROL REFERENCE: U310A
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 5.31 MILLIMETERS MINIMUM AND 5.84 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.92 MILLIMETERS MINIMUM AND 3.81 MILLIMETERS MAXIMUM
TERMINAL CIRCLE DIAMETER: 2.54 MILLIMETERS NOMINAL
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010823406
NSN
5961-01-082-3406
MFG
AUTEK SYSTEMS CORP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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SEMICONDUCTOR DEVICE,DIODE
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5961010823406
NSN
5961-01-082-3406
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010823406
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5961-01-082-3406
972164-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010823406
NSN
5961-01-082-3406
MFG
RAYTHEON COMPANY
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010823406
NSN
5961-01-082-3406
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010823406
NSN
5961-01-082-3406
MFG
MICRO USPD INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010824189
NSN
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010824189
NSN
5961-01-082-4189
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 REVERSE VOLTAGE, DC AND 1500.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 5 RING 1 PHASE
III END ITEM IDENTIFICATION: F-16A&B USAF
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPECIAL FEATURES: SELECTED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
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1855-0267
TRANSISTOR
NSN, MFG P/N
5961010824376
NSN
5961-01-082-4376
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CURRENT RATING MIN.
TERMINAL CIRCLE DIAMETER: 0.135 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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5961010824376
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5961-01-082-4376
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INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CURRENT RATING MIN.
TERMINAL CIRCLE DIAMETER: 0.135 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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NSN, MFG P/N
5961010824376
NSN
5961-01-082-4376
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CURRENT RATING MIN.
TERMINAL CIRCLE DIAMETER: 0.135 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961010824376
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5961-01-082-4376
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FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CURRENT RATING MIN.
TERMINAL CIRCLE DIAMETER: 0.135 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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1854-0712
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010824378
NSN
5961-01-082-4378
1854-0712
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010824378
NSN
5961-01-082-4378
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN, FORRESTAL CLASS CV, OLIVER PERRY CLASS FFG, ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963), TICONDEROGA CLASS CG (47), LANDING CRAFT AIR CUSHION (LCAC); SUPPORT EQUIPMENT, B-52 AIRCRAFT; ENGINE, AIRCRAFT TF33-PW-102 (C-135E,
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
~1: EC-135H/K/P)