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5961-01-092-6581
20 Products
40-666-2351
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926581
NSN
5961-01-092-6581
40-666-2351
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926581
NSN
5961-01-092-6581
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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19A116524P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926582
NSN
5961-01-092-6582
19A116524P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926582
NSN
5961-01-092-6582
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N2158R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926582
NSN
5961-01-092-6582
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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R4110325XX5D00BS14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926582
NSN
5961-01-092-6582
R4110325XX5D00BS14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926582
NSN
5961-01-092-6582
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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50107-506-323
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926891
NSN
5961-01-092-6891
50107-506-323
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010926891
NSN
5961-01-092-6891
MFG
CALCOMP INC
Description
SEMICONDUCTOR DEVICE,DIODE
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158-002-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927047
NSN
5961-01-092-7047
158-002-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927047
NSN
5961-01-092-7047
MFG
THALES TRAINING & SIMULATION LTD
Description
DESIGN CONTROL REFERENCE: 1S923
III END ITEM IDENTIFICATION: DEVICE 2F87F,FLIGHT SIMULATOR,VISUAL SYSTEM TRAINER
MANUFACTURERS CODE: 01295
THE MANUFACTURERS DATA:
Related Searches:
1S923
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927047
NSN
5961-01-092-7047
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 1S923
III END ITEM IDENTIFICATION: DEVICE 2F87F,FLIGHT SIMULATOR,VISUAL SYSTEM TRAINER
MANUFACTURERS CODE: 01295
THE MANUFACTURERS DATA:
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1S2047A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927049
NSN
5961-01-092-7049
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 1S2047A
III END ITEM IDENTIFICATION: DEVICE 2F87F,FLIGHT SIMULATOR,VISUAL SYSTEM TRAINER
MANUFACTURERS CODE: 01295
THE MANUFACTURERS DATA:
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ND77295
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927049
NSN
5961-01-092-7049
MFG
THALES TRAINING & SIMULATION LTD
Description
DESIGN CONTROL REFERENCE: 1S2047A
III END ITEM IDENTIFICATION: DEVICE 2F87F,FLIGHT SIMULATOR,VISUAL SYSTEM TRAINER
MANUFACTURERS CODE: 01295
THE MANUFACTURERS DATA:
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AAZ13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927052
NSN
5961-01-092-7052
MFG
A E L COMMUNICATIONS LTD
Description
DESIGN CONTROL REFERENCE: AAZ13
III END ITEM IDENTIFICATION: DEVICE 2F87F,FLIGHT SIMULATOR,VISUAL SYSTEM TRAINER
MANUFACTURERS CODE: K5056
THE MANUFACTURERS DATA:
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5L5532-405-33
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927056
NSN
5961-01-092-7056
5L5532-405-33
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927056
NSN
5961-01-092-7056
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.680 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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SBMC2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927056
NSN
5961-01-092-7056
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.680 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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JAN1N5469B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927885
NSN
5961-01-092-7885
JAN1N5469B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010927885
NSN
5961-01-092-7885
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5469B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/436
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N4578
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010928207
NSN
5961-01-092-8207
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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584R271H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010928208
NSN
5961-01-092-8208
584R271H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010928208
NSN
5961-01-092-8208
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: E-3A AWACS AIRCRAFT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 584R271H01
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.556 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 97942-584R271 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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68-6497
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010928208
NSN
5961-01-092-8208
68-6497
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010928208
NSN
5961-01-092-8208
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: E-3A AWACS AIRCRAFT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 584R271H01
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.556 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 97942-584R271 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
9306-2203-003
TRANSISTOR
NSN, MFG P/N
5961010929304
NSN
5961-01-092-9304
MFG
BAE SYSTEMS OPERATIONS LTD
Description
TRANSISTOR
Related Searches:
B07700
TRANSISTOR
NSN, MFG P/N
5961010929305
NSN
5961-01-092-9305
MFG
BRITISH AEROSPACE INC MILITARY SUPPORT DIV
Description
TRANSISTOR
Related Searches:
69732800-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010929307
NSN
5961-01-092-9307
69732800-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010929307
NSN
5961-01-092-9307
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.240 INCHES NOMINAL
OVERALL WIDTH: 1.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
TEST DATA DOCUMENT: 27963-69732800 DRAWING
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GZ40911A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010929307
NSN
5961-01-092-9307
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.240 INCHES NOMINAL
OVERALL WIDTH: 1.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
TEST DATA DOCUMENT: 27963-69732800 DRAWING