My Quote Request
5961-01-094-2854
20 Products
SA8023
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010942854
NSN
5961-01-094-2854
SA8023
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010942854
NSN
5961-01-094-2854
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 10001-3221386 DRAWING
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -45.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES NOMINAL
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.730 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
655-682
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010942854
NSN
5961-01-094-2854
655-682
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010942854
NSN
5961-01-094-2854
MFG
MICRO USPD INC
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 10001-3221386 DRAWING
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -45.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES NOMINAL
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.730 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
2N3909
TRANSISTOR
NSN, MFG P/N
5961010942974
NSN
5961-01-094-2974
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: SOURCE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.178 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
052194
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010942975
NSN
5961-01-094-2975
MFG
KOLLMORGEN CORPORATION DBA KOLLMORGEN ELECTRO OPTICAL A DANAHER COMPANY.
Description
DESIGN CONTROL REFERENCE: MA41375R
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 96341
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FREQ 18.0 TO 26.5 GHZ; JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL LENGTH: 0.136 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
THE MANUFACTURERS DATA:
Related Searches:
MA41375R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010942975
NSN
5961-01-094-2975
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
DESIGN CONTROL REFERENCE: MA41375R
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 96341
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FREQ 18.0 TO 26.5 GHZ; JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL LENGTH: 0.136 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
THE MANUFACTURERS DATA:
Related Searches:
052195
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010942976
NSN
5961-01-094-2976
MFG
KOLLMORGEN CORPORATION DBA KOLLMORGEN ELECTRO OPTICAL A DANAHER COMPANY.
Description
DESIGN CONTROL REFERENCE: MA41376
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 96341
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.550 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FREQ 18.0 TO 26.5 GHZ; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.136 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
THE MANUFACTURERS DATA:
Related Searches:
MA41376
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010942976
NSN
5961-01-094-2976
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
DESIGN CONTROL REFERENCE: MA41376
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 96341
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.550 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FREQ 18.0 TO 26.5 GHZ; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.136 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
THE MANUFACTURERS DATA:
Related Searches:
914592
TRANSISTOR
NSN, MFG P/N
5961010943749
NSN
5961-01-094-3749
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: AN/FPS-115/120
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 49956
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 914592
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.410 INCHES NOMINAL
OVERALL LENGTH: 0.050 INCHES MAXIMUM
OVERALL WIDTH: 0.330 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 49956-914592 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
MS417
TRANSISTOR
NSN, MFG P/N
5961010943749
NSN
5961-01-094-3749
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: AN/FPS-115/120
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 49956
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 914592
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.410 INCHES NOMINAL
OVERALL LENGTH: 0.050 INCHES MAXIMUM
OVERALL WIDTH: 0.330 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 49956-914592 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
PH6500
TRANSISTOR
NSN, MFG P/N
5961010943749
NSN
5961-01-094-3749
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: AN/FPS-115/120
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 49956
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 914592
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.410 INCHES NOMINAL
OVERALL LENGTH: 0.050 INCHES MAXIMUM
OVERALL WIDTH: 0.330 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 49956-914592 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
JAN2N3419
TRANSISTOR
NSN, MFG P/N
5961010943750
NSN
5961-01-094-3750
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3419
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/393
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/393 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
0N514972
TRANSISTOR
NSN, MFG P/N
5961010944360
NSN
5961-01-094-4360
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
037200
TRANSISTOR
NSN, MFG P/N
5961010944361
NSN
5961-01-094-4361
MFG
MILLER ELECTRIC MFG CO
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.594 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
05-10103-0
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010944362
NSN
5961-01-094-4362
05-10103-0
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010944362
NSN
5961-01-094-4362
MFG
BALLANTINE LABORATORIES INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
Related Searches:
PAD-50
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010944362
NSN
5961-01-094-4362
PAD-50
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010944362
NSN
5961-01-094-4362
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
Related Searches:
037-735
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010944363
NSN
5961-01-094-4363
MFG
MILLER ELECTRIC MFG CO
Description
CURRENT RATING PER CHARACTERISTIC: 230.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
05-10119-1A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010944365
NSN
5961-01-094-4365
05-10119-1A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010944365
NSN
5961-01-094-4365
MFG
BALLANTINE LABORATORIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10182354-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010945165
NSN
5961-01-094-5165
10182354-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010945165
NSN
5961-01-094-5165
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10182354-003
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
SM-B-640025
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010945259
NSN
5961-01-094-5259
SM-B-640025
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010945259
NSN
5961-01-094-5259
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
DESIGN CONTROL REFERENCE: SM-B-640025
MAJOR COMPONENTS: DIODE 3
MANUFACTURERS CODE: 80063
THE MANUFACTURERS DATA:
Related Searches:
76A0007-000
TRANSISTOR
NSN, MFG P/N
5961010945868
NSN
5961-01-094-5868
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.470 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 21101-76A0007 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER