My Quote Request
5961-01-094-8241
20 Products
MPQ3762
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010948241
NSN
5961-01-094-8241
MPQ3762
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010948241
NSN
5961-01-094-8241
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
Related Searches:
DT721116J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010947931
NSN
5961-01-094-7931
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.780 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
580-073
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010947963
NSN
5961-01-094-7963
580-073
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010947963
NSN
5961-01-094-7963
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
1TS30893
TRANSISTOR
NSN, MFG P/N
5961010948183
NSN
5961-01-094-8183
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-247AS-C0493 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
247AS-C0493-001
TRANSISTOR
NSN, MFG P/N
5961010948183
NSN
5961-01-094-8183
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-247AS-C0493 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
DTS710
TRANSISTOR
NSN, MFG P/N
5961010948184
NSN
5961-01-094-8184
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SDT710
TRANSISTOR
NSN, MFG P/N
5961010948184
NSN
5961-01-094-8184
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
STI-710
TRANSISTOR
NSN, MFG P/N
5961010948184
NSN
5961-01-094-8184
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
0405290004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010948185
NSN
5961-01-094-8185
0405290004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010948185
NSN
5961-01-094-8185
MFG
SUNAIR ELECTRONICS LLC
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
MV2110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010948185
NSN
5961-01-094-8185
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
DDB-6224
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010948186
NSN
5961-01-094-8186
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.508 INCHES MINIMUM AND 0.762 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FREQUENCY 9375 MHZ; FREQUENCY BAND X; BASE REMOVABLE; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 RIBBON
Related Searches:
2N4146
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010948187
NSN
5961-01-094-8187
2N4146
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010948187
NSN
5961-01-094-8187
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.178 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL HEIGHT: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N1798
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010948188
NSN
5961-01-094-8188
2N1798
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010948188
NSN
5961-01-094-8188
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99003-2N1798TX
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 280.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL AND 10.0 MAXIMUM OFF-STATE VOLTAGE, PEAK AND 5.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
99003-2N1798TX
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010948188
NSN
5961-01-094-8188
99003-2N1798TX
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010948188
NSN
5961-01-094-8188
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99003-2N1798TX
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 280.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL AND 10.0 MAXIMUM OFF-STATE VOLTAGE, PEAK AND 5.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
456434
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010948224
NSN
5961-01-094-8224
456434
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010948224
NSN
5961-01-094-8224
MFG
FLUKE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.740 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.135 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR
Related Searches:
MC3346P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010948224
NSN
5961-01-094-8224
MC3346P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010948224
NSN
5961-01-094-8224
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.740 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.135 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR
Related Searches:
SM-A-936069
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010948225
NSN
5961-01-094-8225
SM-A-936069
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010948225
NSN
5961-01-094-8225
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-SM-A-936069 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES PEAK FORWARD SURGE CURRENT AND 75.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 REVERSE VOLTAGE, TOTAL RMS AND 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -50.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.760 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
VK248
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010948225
NSN
5961-01-094-8225
VK248
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010948225
NSN
5961-01-094-8225
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-SM-A-936069 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES PEAK FORWARD SURGE CURRENT AND 75.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 REVERSE VOLTAGE, TOTAL RMS AND 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -50.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.760 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
VK848
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010948225
NSN
5961-01-094-8225
VK848
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010948225
NSN
5961-01-094-8225
MFG
SEMITRONICS CORP
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-SM-A-936069 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES PEAK FORWARD SURGE CURRENT AND 75.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 REVERSE VOLTAGE, TOTAL RMS AND 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -50.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.760 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
4271-3762
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010948241
NSN
5961-01-094-8241
4271-3762
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010948241
NSN
5961-01-094-8241
MFG
GENRAD INC
Description
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR